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SPP2301 Abstract: MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	SPP2301 SPP2301 -20V/-2 MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG

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SPP2301

Abstract: MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG
Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

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SPP2301 SPP2301 -20V/-2 MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG