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    SPP2301 Search Results

    SPP2301 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPP2301 Unknown P-Channel Enhancement Mode MOSFET Original PDF
    SPP2301A SYNC Power P-Channel Enhancement Mode MOSFET Original PDF
    SPP2301AS23RG SYNC Power P-Channel Enhancement Mode MOSFET Original PDF
    SPP2301S23RG SYNC Power P-Channel Enhancement Mode MOSFET Original PDF

    SPP2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPP2301A

    Abstract: SPP2301AS23RG P-CHANNEL
    Text: SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301A SPP2301A -20V/-2 SPP2301AS23RG P-CHANNEL

    SPP2301D

    Abstract: MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23
    Text: SPP2301D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301D SPP2301D -20V/-2 MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23

    SPP2301A

    Abstract: MOSFET SPP2301AS23RGB SPP2301AS23RG
    Text: SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301A SPP2301A -20V/-2 MOSFET SPP2301AS23RGB SPP2301AS23RG

    SPP2301

    Abstract: MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301 SPP2301 -20V/-2 MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG

    sot-23 P-Channel MOSFET

    Abstract: MOSFET P-channel SOT-23 SPP2301 SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301 SPP2301 -20V/-2 sot-23 P-Channel MOSFET MOSFET P-channel SOT-23 SPP2301S23RG

    SPP2301

    Abstract: SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2301 SPP2301 -20V/-2 SPP2301S23RG