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    SPP2301S23RG Search Results

    SPP2301S23RG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP2301S23RG SYNC Power P-Channel Enhancement Mode MOSFET Original PDF

    SPP2301S23RG Datasheets Context Search

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    SPP2301

    Abstract: MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original
    PDF SPP2301 SPP2301 -20V/-2 MOSFET SPP2301S23RGB sot 223 52 10a SPP2301S23RG

    sot-23 P-Channel MOSFET

    Abstract: MOSFET P-channel SOT-23 SPP2301 SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original
    PDF SPP2301 SPP2301 -20V/-2 sot-23 P-Channel MOSFET MOSFET P-channel SOT-23 SPP2301S23RG

    SPP2301

    Abstract: SPP2301S23RG
    Text: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original
    PDF SPP2301 SPP2301 -20V/-2 SPP2301S23RG