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    SPI FLASH PRODUCT ID C2 Search Results

    SPI FLASH PRODUCT ID C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    SPI FLASH PRODUCT ID C2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS25LQ128

    Abstract: discoverable
    Text: 128Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI Bus Interface IS25LQ128 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V – 3.6 V • Memory Organization - IS25LQ128: 16384K x 8 128 Mbit • Cost Effective Sector/Block Architecture


    Original     		PDF 128Mbit IS25LQ128 IS25LQ128: 16384K 128Mb 32K/64KByte 532MHz 66MHz. IS25LQ128-JFLE IS25LQ128 discoverable

    IS25LQ064

    Abstract: IS25LQ
    Text: 64Mbit Single Operating Voltage Serial Flash Memory With 133 MHz Dual- or Quad-Output SPI Bus Interface IS25LQ064 FEATURES • Single Power Supply Operation - Low voltage range: 2.3 V – 3.6 V • Memory Organization - IS25LQ064: 8192K x 8 64 Mbit • Cost Effective Sector/Block Architecture


    Original     		PDF 64Mbit IS25LQ064 208-mil 16-pin IS25LQ064-JBLE IS25LQ064-JPLE IS25LQ064-JFLE IS25LQ064-JMLE IS25LQ064-JNLI IS25LQ064-JBLI IS25LQ064 IS25LQ

    Untitled

    Abstract: No abstract text available
    Text: FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V20 FM25V20 FM25V20-G FM25V20-DG FM25V20-PG FM25V20-GTR FM25V20-DGTR

    MX25L1605A

    Abstract: MX25L16* 8PIN 8x6mm Macronix MX25L1605 mxic M25P16 MX25L16* 16PIN SPI flash product id MXIC LOT NUMBER HEX-AB
    Text: APPLICATION NOTE Replacing The STM 16M Serial Flash with Macronix 16M Serial Flash Part number comparison Part Number Macronix STM 16Mb Serial Flash MX25L1605A M25P16 Introduction Macronix offers a family of serial flash products from 1Mb to 128Mb densities. Of these products, 16Mb density is the


    Original     		PDF MX25L1605A M25P16 128Mb M25P16, MX25L1605A MX25L1605A) M25P16) 300mil 16-pin MX25L16* 8PIN 8x6mm Macronix MX25L1605 mxic M25P16 MX25L16* 16PIN SPI flash product id MXIC LOT NUMBER HEX-AB

    fm25v20

    Abstract: FM25V20-G RG5V20
    Text: FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V20 FM25V20-G FM25V20-DG FM25V20-PG FM25V20-GTR FM25V20-DGTR fm25v20 RG5V20

    marking c2h

    Abstract: RG5V20 FM25V20-G
    Text: Pre-Production FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V20 /Ro1029 FM25V20-G FM25V20-DG FM25V20-GTR FM25V20-DGTR marking c2h RG5V20

    RG5V02

    Abstract: RG5VN02
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG RG5V02 RG5VN02

    RG5V20

    Abstract: FM25V20 FM25V20-G RAMTRON FM25V20-DG
    Text: Pre-Production FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V20 /Ro1029 FM25V20-G FM25V20-DG FM25V20-GTR FM25V20-DGTR RG5V20 FM25V20 RAMTRON

    FM25V01-G

    Abstract: No abstract text available
    Text: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V01 128Kb FM25V01, FM25V01-G A9646447 RIC1021 FM25V01 FM25V01-GTR FM25V01-G

    RG5V02

    Abstract: fm25v02
    Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02

    FM25V02

    Abstract: No abstract text available
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR FM25V02

    FM25V02-DG

    Abstract: No abstract text available
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		PDF FM25V02 256Kb FM25V02-DG

    RG5V02

    Abstract: FM25V02 FM25V02-GTR FM25V02-G fm25v02gtr
    Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 FM25V02 fm25v02gtr

    FM25V01-G

    Abstract: FM25V01
    Text: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V01 128Kb FM25V01-G FM25V01

    RTL8168B

    Abstract: No abstract text available
    Text: RTL8168B INTEGRATED GIGABIT ETHERNET CONTROLLER FOR PCI EXPRESS APPLICATIONS w/SPI DATASHEET Rev. 1.1 05 July 2005 Track ID: JATR-1076-21 RTL8168B Datasheet COPYRIGHT 2005 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced,


    Original     		PDF RTL8168B JATR-1076-21 RTL8168Bâ 64-Pin RTL8168B-GR RTL8168B

    FM25V01-G

    Abstract: FM25V01
    Text: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V01 128Kb FM25V01, FM25V01-G A9646447 RIC1021 FM25V01 FM25V01-GTR

    FM25V02

    Abstract: FM25VN02 FM25V02-G
    Text: Preliminary FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25VN02 FM25V02-G

    FM25V01-GTR

    Abstract: fm25v01 FM25V01-G
    Text: Preliminary FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V01 128Kb FM25V01, FM25V01-G A9646447 RIC1021 FM25V01 FM25V01-GTR

    FM25V02-G

    Abstract: FM25V02-GTR FM25V02 RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr
    Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-G FM25V02-GTR RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05, 340282A, 25V05 A6340282A RIC0824 25VN05

    Untitled

    Abstract: No abstract text available
    Text: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		PDF FM25V01 128Kb

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V10 FM25VN10) FM25V10, 340282A, 25V10 A6340282A RIC0824 25VN10

    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Text: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V05 512Kb FM25VN05) FM25V05-G FM25VN05-G FM25V05-GTR FM25VN05-GTR FM25V05 fm25v05g

    Fm25v01

    Abstract: No abstract text available
    Text: FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM Organized as 16,384 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		PDF FM25V01 128Kb Fm25v01