Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 5 10 mm scale Dimensions Unit 1 A b 4.7 11.81 4.2 11.56 w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405
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OT539B
50nsions
sot539b
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philips H1
Abstract: sot539a
Text: PDF: 1999 Dec 09 Philips Semiconductors Package outline Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT539A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D1 U1 B q C w2 M C M H1 1 c
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OT539A
philips H1
sot539a
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF power LDMOS transistor Objective specification 1998 Nov 19 Objective specification UHF power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control
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M3D427
BLF2048
OT539A
SCA60
125108/00/02/pp8
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Capacitor Tantal SMD
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp11
Capacitor Tantal SMD
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sot539bpo
Abstract: No abstract text available
Text: Package outline Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 5 10 mm scale Dimensions Unit 1 A b 4.7 11.81 4.2 11.56 c D D1 E E1 0.18 31.55 31.52 9.5 9.53 0.10 30.94 30.96 9.3 9.27 e F H
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OT539B
OT539B
sot539b
sot539bpo
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Capacitor Tantal SMD
Abstract: capacitor 0,1 k 250 mkt philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp11
Capacitor Tantal SMD
capacitor 0,1 k 250 mkt philips
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SOT539A
Abstract: No abstract text available
Text: PDF: 2000 Mar 08 Philips Semiconductors Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT539A
SOT539A
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2222-581
Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain
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M3D427
BLF2048
OT539A
603516/09/pp11
2222-581
capacitor MKT Philips
PHILIPS MKT CAPACITOR
BLF2048
capacitor 400 MKT philips
C26C27
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BLF2022-120
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain
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M3D427
BLF2022-120
OT539A
603516/09/pp7
BLF2022-120
BP317
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transistor 2201
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
BLF2048
OT539A
125108/00/01/pp8
transistor 2201
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SOT539A
Abstract: No abstract text available
Text: 4 CD FM SOT539A CDFM4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 29 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT539A
msc071
OT539A
SOT539A
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SOT539
Abstract: No abstract text available
Text: Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L A 3 E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT539A
OT539A
SOT539
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Capacitor Tantal SMD
Abstract: Tantal SMD transistor SMD 2201
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION
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M3D427
BLF2048
OT539A)
125108/00/01/pp12
Capacitor Tantal SMD
Tantal SMD
transistor SMD 2201
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sot539b
Abstract: philips h1
Text: PDF: 1999 Dec 17 Philips Semiconductors Package outline Earless flanged balanced LDMOST package; 4 leads SOT539B Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D D1 U1 w2 M D M H1 1 c 2 E1 H U2 E 5
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OT539B
sot539b
philips h1
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SOT539A
Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power
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OT987B
OT895A
OT981A
OT988B
OT896B
OT986B
OT982A
OT980A
OT1015BG
OT538A
SOT539A
SOT975B
SOT540A
SOT538A
sot538b
sot988
SOT608B
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sot1244c
Abstract: RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor
Text: RF Power Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth Factsheet 001 — July 2012 Factsheet 1. Gen8 LDMOS RF power transistor with Video Bandwidth VBW The proliferation of standards in the cellular base-station market has triggered power
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70MHz.
60MHz
sot1244c
RF Power
blf8g10
BLF8G10LS
sot1242
how to test transistor
"RF Power Transistor"
sot539b
RF power transistor
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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150P
Abstract: BLF7G27LS-150P ACPR1980 ACPR885
Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-150P;
BLF7G27LS-150P
IS-95
ACPR885k
IS-95
BLF7G27L-150P
7G27LS-150P
150P
BLF7G27LS-150P
ACPR1980
ACPR885
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1800 ldmos
Abstract: SOT539A
Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN
BLF6G20-230PRN
1800 ldmos
SOT539A
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Untitled
Abstract: No abstract text available
Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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TRANSISTOR 726
Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information
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BLL6H1214-500
BLL6H1214-500
TRANSISTOR 726
800B
BV 726 B
BV 726 C
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BLF6G20(S)-45
Abstract: No abstract text available
Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN;
BLF6G20S-230PRN
BLF6G20-230PRN
20S-230PRN
BLF6G20(S)-45
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS P relim inary specification UHF power LDMOS transistor BLF2048 FEATURES PINNING - SOT539A • H igh p o w e r ga in PIN DESCRIPTION • E a s y p o w e r c o n tro l 1 d ra in 1 • E x c e lle n t ru g g e d n e s s
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OCR Scan
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BLF2048
OT539A
SCA63
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