Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b
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OT440A
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BP317
Abstract: LTE21025R marking code 439
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
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LTE21025R
OT440A
SCA53
127147/00/02/pp8
BP317
LTE21025R
marking code 439
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sot440a
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT440A
sot440a
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LTE42012R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency
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LTE42012R
OT440A
SCA53
127147/00/02/pp12
LTE42012R
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LTE42005S
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
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LTE42005S
OT440A
LTE42005S
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SC19a
Abstract: SC19 LTE21009R BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A
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LTE21009R
OT440A
SCA53
127147/00/02/pp8
SC19a
SC19
LTE21009R
BP317
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mga028
Abstract: 339 marking code transistor MGA02 BP317 PTC4001T SC15 SOT440A
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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PTC4001T
SCA53
127147/00/02/pp8
mga028
339 marking code transistor
MGA02
BP317
PTC4001T
SC15
SOT440A
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MSA103
Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X;
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PTB23001X;
PTB23003X;
PTB23005X
OT440A
SCA53
127147/00/02/pp12
MSA103
PERMITTIVITY* 2.55
PTB23001X
PTB23003X
PTB23005X
SC15
MSA112
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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E 1007
Abstract: PTB23002U
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network
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PTB23002U
SCA53
127147/00/02/pp12
E 1007
PTB23002U
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MSA117
Abstract: PTB32001X PTB32003X PTB32005X
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors
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PTB32001X;
PTB32003X;
PTB32005X
OT440A
SCA53
127147/00/02/pp12
MSA117
PTB32001X
PTB32003X
PTB32005X
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SOT333
Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage
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417 - 162 TRANSISTOR
Abstract: 1273 transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Gold metallization realizes very stable characteristics
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OT440A
LTE42008R
417 - 162 TRANSISTOR
1273 transistor
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile
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OT440A
LTE21009R
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.
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OT440A
PTC4001T
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mga028
Abstract: TRANSISTOR NPN 5GHz PTC4001T
Text: Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.
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PTC4001T
OT440A
OT440A.
mga028
TRANSISTOR NPN 5GHz
PTC4001T
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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RX1214B80W
RX1214B130Y
RX1214B170W
RX1214B300Y
RX1214B350Y
RZ1214B35Y
RZ1214B65Y
BLS2731-10
BLS2731-20
BLS2731
Philips Semiconductors Selection Guide
LTE42005S
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EUROFARAD capacitor
Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.
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MTB10010U
EUROFARAD capacitor
erie 1250-003
EUROFARAD cec
EUROFARAD ceramic capacitor
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274 transistor
Abstract: transistor c 5855
Text: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and
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OT440A
PTB23006U
Erie1250-003
GA244
274 transistor
transistor c 5855
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MCD628
Abstract: LTE42008R SC15 transistor marking code 1325 ss 297 transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 collector • Gold metallization realizes very stable characteristics
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LTE42008R
OT440A
OT440A
MCD628
OT440A.
MCD628
LTE42008R
SC15
transistor marking code 1325
ss 297 transistor
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transistor top 222
Abstract: LTE21025R SC15 marking code 439
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted
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LTE21025R
OT440A
OT440A
OT440A.
transistor top 222
LTE21025R
SC15
marking code 439
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