E 1007
Abstract: PTB23002U
Text: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network
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PTB23002U
SCA53
127147/00/02/pp12
E 1007
PTB23002U
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Philips tea1090
Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS
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DN-41
LO9585/WD
LO9585
LO9700
OQ8845T/K3
OQ8868HP/K6
QFP47)
X2G-BUK5R3-100B
Philips tea1090
tea1090
tea1402
pcf2705p
philips TEA1090T
SAA7321GP
TDA2579A
LMT 393 N
TDA3653bq
TEA5713
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Text: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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BGY916
BLF145
BLF175
BLF177
BLF242
BLF244
BLF245
BLF245B
BLF248
BLF278
SD1446
SD2910
philips blx15
BLV36
BLW60C
st cross reference
blw97
SD4575
BLV103
MX0912B350Y
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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RX1214B80W
RX1214B130Y
RX1214B170W
RX1214B300Y
RX1214B350Y
RZ1214B35Y
RZ1214B65Y
BLS2731-10
BLS2731-20
BLS2731
Philips Semiconductors Selection Guide
LTE42005S
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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erie capacitor
Abstract: PTB23002U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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PTB23002U
OT440A
OT44QA.
erie capacitor
PTB23002U
SC15
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LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
Text: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50
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BLS2731-10
BLS2731-20
BLS2731-50
BLS2731-110
BLS2731-150
LBE2003S
LBE2009S
LFE15600X
LLE15180xX
LLE15370X
LFE15
LAE4001R
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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PTB23002U
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FO-229
Abstract: No abstract text available
Text: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18
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E4001R
LTE4002S
LTE42005S
LTE42008R
LTE42012R
T-100
FO-41B
FO-229
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