Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT448A D A F 3 D1 U1 B q c C 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c
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OT448A
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Untitled
Abstract: No abstract text available
Text: Package outline Studless ceramic package; 4 leads SOT441A D A Q c D1 H b 4 b1 3 H 1 2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b b1 c D D1 H Q mm 2.48 1.60 3.23 3.13 0.81 0.71 0.16 0.10 3.38 3.08 5.34 5.08 19 17 1.15 0.89 inches 0.098
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OT441A
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2
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OT445B
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b
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OT440A
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SOJ40
Abstract: No abstract text available
Text: PDF: 2003 Mar 24 Philips Semiconductors Package outline SOJ40: plastic small outline package; 40 leads J-bent ; body width 10.16 mm SOT449-1 X D c eE y bp 40 b1 A 21 w M E HE A2 A pin 1 index A1 (A 3) 1 20 Lp ZD e detail X v M A 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
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SOJ40:
OT449-1
MS-027
SOJ40
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445B D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445B
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sot441
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT441A D A Q c D1 H b 4 b1 3 H 1 2 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b b1 c D D1 H Q mm 2.48 1.60 3.23 3.13 0.81 0.71 0.16 0.10 3.38 3.08
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OT441A
sot441
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sot445
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445C
sot445
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BP317
Abstract: LTE21025R marking code 439
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent
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LTE21025R
OT440A
SCA53
127147/00/02/pp8
BP317
LTE21025R
marking code 439
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BP317
Abstract: RZ1214B65Y L-Band
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
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M3D034
RZ1214B65Y
OT443A
125002/03/pp8
BP317
RZ1214B65Y
L-Band
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BLS3135-10
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications
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M3D324
BLS3135-10
OT445C
603516/01/pp12
BLS3135-10
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LZ1418E100R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A
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LZ1418E100R
OT443A
SCA53
127147/00/02/pp12
LZ1418E100R
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b
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OT443A
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2
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OT445A
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency
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RZ1214B65Y
SCA53
127147/00/02/pp8
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445A D A F 3 D1 D2 U1 B q C c 1 H U2 E2 E1 w1 M A M B M p A E 2 Q w2 M C M b 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT
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OT445A
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PVB42004X
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PVB42004X
OT445A)
MGL019
OT445A.
PVB42004X
SC15
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E50R
Abstract: 1721E50R MAM251 LV1721E50R SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEA TU R ES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high V S W R
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LV1721E50R
OT445A.
E50R
1721E50R
MAM251
LV1721E50R
SC15
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TIC 122 Transistor
Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy
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BLS3135-10
OT445C
TIC 122 Transistor
RF NPN POWER TRANSISTOR 3 GHZ
TRANSISTOR C 557 B
RF NPN POWER TRANSISTOR C 10-12 GHZ
BLS3135-10
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LV1721E50R FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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LV1721E50R
MQD960
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LZ14
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES LZ1418E100R PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OT443A
LZ1418E100R
LZ14
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MCD628
Abstract: LTE42008R SC15 transistor marking code 1325 ss 297 transistor
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 collector • Gold metallization realizes very stable characteristics
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LTE42008R
OT440A
OT440A
MCD628
OT440A.
MCD628
LTE42008R
SC15
transistor marking code 1325
ss 297 transistor
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transistor 38W
Abstract: transistor 38W 3 pin 38w transistor PZB16035U SC15 transistor 38W 16
Text: Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PZB16035U
OT443A.
transistor 38W
transistor 38W 3 pin
38w transistor
PZB16035U
SC15
transistor 38W 16
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transistor top 222
Abstract: LTE21025R SC15 marking code 439
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted
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LTE21025R
OT440A
OT440A
OT440A.
transistor top 222
LTE21025R
SC15
marking code 439
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