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    SOT143 FET Search Results

    SOT143 FET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8224ACPZ-RL Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy

    SOT143 FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


    Original     		PDF OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363

    38mm2

    Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
    Text: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.


    Original     		PDF 850MHz OT-143 KGF1155B KGF1156 MBF9301 849MHz 38mm2 FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    ComChip Date code

    Abstract: smd DIODE code marking 20A sot143 Marking code p1 tlp 241 marking code 62 6 pin SMD IEC61000-4-4 SOT14 smd diode marking code 143 sot143 fet smd diode 319
    Text: Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS045V0P RoHs Device Features SOT-143 ESD Protected for 2 high speed I/O ports 0.119 3.00 0.110(2.80) IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). IEC61000-4-4 (FET)(5/50ns) Level-3, 20A for I/O


    Original     		PDF CSRS045V0P OT-143 IEC61000-4-2 IEC61000-4-4 5/50ns) IEC61000-4-5 8/20uS) OT-143 MIL-STD-750 QW-BP012 ComChip Date code smd DIODE code marking 20A sot143 Marking code p1 tlp 241 marking code 62 6 pin SMD IEC61000-4-4 SOT14 smd diode marking code 143 sot143 fet smd diode 319

    transistor marking M04 GHZ

    Abstract: m04 marking dual-gate
    Text: Short-form preliminary specification Philips Sem iconductors Dual-gate MOS-FET BF904; BF904R FEATURES DESCRIPTION • Specially designed for use at 5 V supply voltage Enhancement type field-effect transistors in plastic micro-miniature SOT143 and SOT143R envelopes.


    OCR Scan     		PDF BF904; BF904R OT143 OT143R MAM077 OT143) transistor marking M04 GHZ m04 marking dual-gate

    Untitled

    Abstract: No abstract text available
    Text: Short-form product specification Philips Semiconductors BF990A Silicon N-channel dual-gate MOS-FET APPLICATIONS • UHF applications such as television tuners with 12 V supply voltage, and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143


    OCR Scan     		PDF BF990A OT143

    Untitled

    Abstract: No abstract text available
    Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		PDF BF996S OT143

    mosfet marking code gg

    Abstract: marking g1s marking code g1s
    Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television


    OCR Scan     		PDF 711002b BF997 OT143 mosfet marking code gg marking g1s marking code g1s

    Untitled

    Abstract: No abstract text available
    Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and


    OCR Scan     		PDF BF994S 711002b 003407b OT143

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		PDF bbS3T31 QQ23ti2S BF994S OT143

    Untitled

    Abstract: No abstract text available
    Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.


    OCR Scan     		PDF 711002b BF994S OT143

    Untitled

    Abstract: No abstract text available
    Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television


    OCR Scan     		PDF QD2M73D BF989 OT143

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF bbS3T31 QDE473T BF991 OT143 OT103

    marking code 11G1

    Abstract: No abstract text available
    Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V


    OCR Scan     		PDF BF990A OT143 bb53T31 0Q2473b marking code 11G1

    BF991

    Abstract: G2S-50
    Text: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF 02473cà BF991 OT143 200MHz SQT103 BF991 G2S-50

    fet dual gate sot143

    Abstract: BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor
    Text: BF990A P H I L IPS INTERNATIONAL_ SbE D Bi 7110flSti 0034070 5T7 M P H I N FOR D E TA ILE D INFO R M A TIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T-35-Z 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and


    OCR Scan     		PDF BF990A T-35-Z7 OT143 OT143. fet dual gate sot143 BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor

    BF994S

    Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
    Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.


    OCR Scan     		PDF bbS3T31 BF994S OT143 BF994S L7E transistor n Power mosfet depletion free transistor bs 200

    FM02

    Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
    Text: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and


    OCR Scan     		PDF D074311 BF996S OT143 FM02 marking ANs bs 159 FET MARKING CODE BF996S BF996

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		PDF applicat174 PMBFJ175 PMBFJ176 PMBFJ177 OT-23 OT-89 OT-143 OT-223 OT-23 SMD CODE MARKING s7 SOT23 PMBFJ111 PMBFJ174 BSR56 BFT46

    sot-23 Marking M6

    Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
    Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		PDF BSP121 BSP126 BSP205 BSP206 BSP220 BSP225 BSR56 BSR57 BSR58 BSS83 sot-23 Marking M6 FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel

    m8p smd

    Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
    Text: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 OT-223 OT-69 m8p smd sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    F1313

    Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
    Text: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp


    OCR Scan     		PDF OT143) S0T143) S0T143I KGF1145 KGF1146 F1145 F1313 F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701