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    FM02

    Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
    Text: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and


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    PDF D074311 BF996S OT143 FM02 marking ANs bs 159 FET MARKING CODE BF996S BF996

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: F996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


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    PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S

    Untitled

    Abstract: No abstract text available
    Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S


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    PDF fl23b320 Q62702-F964 Q62702-F1021 23b320

    marking code 11G1

    Abstract: No abstract text available
    Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE F996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.


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    PDF 0DE4750 BF996S OT143 marking code 11G1

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    BF996S

    Abstract: free transistor bs 200 marking ANs marking BS mosfet
    Text: m bb53^31 QÜBM75Q 4Ö2 H A P X N AMER PHILIPS/DISCRETE F996S b7E D SILICON N-CHANNEL DUAL GATE MOS-FET D epletion typ e fie ld -e ffe c t tran sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and substrate interconnected and intended fo r U H F a pplications in television tuners.


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    PDF BM75Q BF996S OT143 BF996S free transistor bs 200 marking ANs marking BS mosfet