Untitled
Abstract: No abstract text available
Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and
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BF994S
711002b
003407b
OT143
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Untitled
Abstract: No abstract text available
Text: 4L* R o c k w e ll Semiconductor Systems RL56CSM/3 Downloadable Digital Central Site Modem Device Introduction Features The RL56CSM/3 is a low-power, digital central site modem system providing three communication channels in a single package. A flexible architecture provides PSTN
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RL56CSM/3
RL56CSM/3
kr520i
340-Pin
MD194
7A11073
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CSR52-53
Abstract: No abstract text available
Text: PRELIMINARY a Am79C960 PCnet -ISA Single-Chip Ethernet Controller Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Industry Standard Architecture ISA and Extended Industry Standard Architecture (EISA) buses
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Am79C960
10BASE-T
10BASE-T
Am7990
LA17-13
LA17-23.
257S27
CSR52-53
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2BL4
Abstract: DS32KHZ quartz 32khz gmd-32 34D72
Text: 9 DS32KHZ 32.768 KHz TCXO I l t d DALLAS SEMICONDUCTOR www.dalsemi.com FEATURES PIN ASSIGNMENT A • ■ ■ ■ ■ ■ ■ ■ ■ Accurate to ±4 Min/Yr. -40°C to +85°C Accurate to ±1 Min/Yr. (0°C to 40° C) Battery back up for continuous time keeping
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DS32KHZ
Cto40Â
32KHz:
DS32KHZ/BGA
DS32KHZN/BGA
DS32KHZ/DIP
DS32KHZN/DIP
36-pin
14-pin
2BL4
quartz 32khz
gmd-32
34D72
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PEB 2261
Abstract: 0034D A03407
Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current
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Am28F020A
32-Pin
-32-pin
PEB 2261
0034D
A03407
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zua11
Abstract: No abstract text available
Text: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 )J.m CMOS process and high-speed circuit designing
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HM62W8511H
524288-word
ADE-203-750
512-kword
400-mil
36-pin
ns/12
ns/15
zua11
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Untitled
Abstract: No abstract text available
Text: Am28F020A 2 Megabit 262,144 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ — 30 mA maximum active current
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Am28F020A
32-Pin
28F020A
D557SB8
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