Untitled
Abstract: No abstract text available
Text: Short-form product specification Philips Semiconductors BF990A Silicon N-channel dual-gate MOS-FET APPLICATIONS • UHF applications such as television tuners with 12 V supply voltage, and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143
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BF990A
OT143
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Untitled
Abstract: No abstract text available
Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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BF996S
OT143
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mosfet marking code gg
Abstract: marking g1s marking code g1s
Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television
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711002b
BF997
OT143
mosfet marking code gg
marking g1s
marking code g1s
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Untitled
Abstract: No abstract text available
Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and
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BF994S
711002b
003407b
OT143
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.
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bbS3T31
QQ23ti2S
BF994S
OT143
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Untitled
Abstract: No abstract text available
Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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711002b
BF994S
OT143
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Untitled
Abstract: No abstract text available
Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television
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QD2M73D
BF989
OT143
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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bbS3T31
QDE473T
BF991
OT143
OT103
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marking code 11G1
Abstract: No abstract text available
Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.
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0DE4750
BF996S
OT143
marking code 11G1
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marking code 11G1
Abstract: No abstract text available
Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V
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BF990A
OT143
bb53T31
0Q2473b
marking code 11G1
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BF991
Abstract: G2S-50
Text: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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02473cÃ
BF991
OT143
200MHz
SQT103
BF991
G2S-50
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BF994S
Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.
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bbS3T31
BF994S
OT143
BF994S
L7E transistor
n Power mosfet depletion
free transistor bs 200
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fet dual gate sot143
Abstract: BF990A FET MARKING CODE marking Z7 mosfet depletion 10 marking code dual transistor
Text: BF990A P H I L IPS INTERNATIONAL_ SbE D Bi 7110flSti 0034070 5T7 M P H I N FOR D E TA ILE D INFO R M A TIO N SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T-35-Z 7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and
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BF990A
T-35-Z7
OT143
OT143.
fet dual gate sot143
BF990A
FET MARKING CODE
marking Z7
mosfet depletion
10 marking code dual transistor
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FM02
Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
Text: L3E D • 1^53*124 D 0 7 4 3 1 1 MES H S I C 3 B F996S NAPC/PHILIPS SEHICON] FOR D E T A ILE D IN F O R M A TIO N SEE THE LATEST ISSUE OF HAN DBO O K SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and
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D074311
BF996S
OT143
FM02
marking ANs
bs 159
FET MARKING CODE
BF996S
BF996
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Zener Diode 4148
Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Text: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80
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OT-23,
OT-143,
S0D-80
OT-143
OT-89
OT-23
BAS28
Zener Diode 4148
zener T 4148
T 4148 zener
ZENER diode t 4148
ZENER 4148
1N914 SOT-23
v 4148 zener diode
diode t 4148
zener diode 4148 code
diode 4148 sot-23
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SBMT2222A
Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)
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100ic
OT-143
OT-143
KTY13B
OT-23
OT-23
KSY13
SBMT2222A
Siemens MOSFET S100
712 sot23 mosfet
AL25-100
682 SOT-23
sod-123 4007
RF Transistors sot-23
pj 989
359 sot23
KTY13A
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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BB219
Abstract: sod80 diodes color code SOD-80 COLOR MARKING smd glass diode color codes marking KL sot-23 sot-23 pinout DIODE COLOR BAND MARKING CODES BBY39 PHILIPS DIODE COLOR BAND MARKING marking 25 SOT-23 power
Text: VARIABLE CAPACITANCE SMD DIODES DESCRIPTION • Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated range of reverse voltage values. The devices also have very low
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BB215
BB219
BB804
BBY31
BBY39
BBY40
BBY42
BBY62
OT-23
OT-143
sod80 diodes color code
SOD-80 COLOR MARKING
smd glass diode color codes
marking KL sot-23
sot-23 pinout
DIODE COLOR BAND MARKING CODES
PHILIPS DIODE COLOR BAND MARKING
marking 25 SOT-23 power
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1N4937 SMD
Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series
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CLL914
CMPD28
CMPD28I
CMPD7000
BAS28
CMPD4448
CLL4448
CMPD41
CLL4150
BAS56
1N4937 SMD
diode 1n4007 melf smd
2n5401 smd
1n4001 melf
diode 1n4007 melf
2n2222a SOT223
1N4148 SOD-80
2n2222a SOT23
1N5819 SOD80
2N2369 SOT-23
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smd diode schottky code marking 2U
Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Text: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/
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OT-23
OT-143
ODBAT54C
BAT54S
BAT74
PMBD101
PMBD352
PMBD353
PRLL5817
PRLL5818
smd diode schottky code marking 2U
smd diode marking 2U
smd diode marking codes 2U
2U marking code diode smd
smd diode marking A3 sot23
MV smd marking code SOT23
sot143 marking code A3
smd diode code marking 2U
marking l4 sot-23
SMD DIODE 2U
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s1P SOT23
Abstract: BBY39 S2p SOT-23 SOD-23 BB219 Diode SM 48 smd code BBY31 175 sot-23 XL SOT23 am SMD sot23
Text: Variable Capacitance SM D’ Diodes Variable Capacitance SMD Diodes Description Mechanical Data Philips Components variable capacitance varicap diodes are optimized to exhibit linear, highly dependable dynamic capacitance characteristics over the entire rated
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T-143
BB804
BBY31
BBY39
BBY40
BBY42
BBY62
OT-23
OT-143
OD-80C
s1P SOT23
S2p SOT-23
SOD-23
BB219
Diode SM 48 smd code
BBY31
175 sot-23
XL SOT23
am SMD sot23
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1N4007 diode SOD 80
Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode
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BAS28
CLL914
CMPD2836
CMPD2838
CMPD7000
CLL4448
CMPD4448
BAS56
CLL4150
CMPD4150
1N4007 diode SOD 80
1N4148 SMA
2n2222a SOT23
smd 2n3055
2N2369 SOT-23
2n3904 smd
2n3055 SOT-23
TIP41 SOT23
2N6520 sot23
SMD DIODE 1N4006
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DIODE smd marking A7p
Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Text: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur
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PMBD2836
PMBD2837
PMBD2838
PMBD6050
PMBD6100
PMBD7000
OT-23
OT-143
OT-223
DIODE smd marking A7p
smd code A4p
SOT23 marking A7p
sot23 a4p
A7p smd
smd code A7p
SMD L31
sot143 marking code JTp
smd A7p
P5D SMD
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1N4148 SOD-80
Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
Text: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23
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BAS28
BAS56
CLL914
CLL2003
CLL4150
CLL4448
CLL5001
CMPD914
CMPD1001
CMPD1001A
1N4148 SOD-80
1N SERIES DIODE
SMD diode C5C
smd diode A82
DIODE smd marking MO
smd diode j
SMD diode CA2
L21 SMD
DIODE 914
SMD diode Ca6
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