Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged ceramic package; 2 leads SOT1135B D A F 3 D1 D U1 c 1 H U2 E1 2 b w2 D Q 5 10 mm scale Dimensions Unit 1 A max 4.65 nom min 3.76 b c D D1 E E1 F H Q U1 U2 5.26 0.18 9.65 9.65 9.65 9.65 1.14 19.94 1.70 9.91 9.91 5.00 0.10 9.40 9.40 9.40 9.40 0.89
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OT1135B
03ion
sot1135b
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rf power transistors
Abstract: SOT539A SOT113 SOT1130A SOT1121A SOT922-1 SOT1135A sot1244c SOT1110B
Text: Ceramic packages for RF Power Transistors 1 SOT467B SOT467C SOT1135B SOT1135C SOT1130A SOT1130B SOT1135A SOT1135D SOT1120A SOT1120B SOT1121A SOT1121B SOT1121C SOT1121D SOT1112A SOT1112B Ceramic packages for RF Power Transistors (2) SOT1110A SOT1110B SOT1117A
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OT467B
OT467C
OT1135B
OT1135C
OT1130A
OT1130B
OT1135A
OT1135D
OT1120A
OT1120B
rf power transistors
SOT539A
SOT113
SOT1130A
SOT1121A
SOT922-1
SOT1135A
sot1244c
SOT1110B
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transistor j449
Abstract: SOT113 JESD625-A 001aam267
Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 2 — 13 September 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information
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BLL6H0514L-130;
BLL6H0514LS-130
BLL6H0514L-130
0514LS-130
transistor j449
SOT113
JESD625-A
001aam267
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Untitled
Abstract: No abstract text available
Text: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 2 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-40RN;
BLF6G15LS-40RN
BLF6G15L-40RN
6G15LS-40RN
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
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OT975B
OT538A
OT1227A
OT975C
OT1227B
OT467B
OT467C
OT1228A
OT1228B
OT608A
sot979
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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JESD625-A
Abstract: No abstract text available
Text: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information
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BLL6H0514L-130;
BLL6H0514LS-130
BLL6H0514L-130
0514LS-130
JESD625-A
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6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
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Untitled
Abstract: No abstract text available
Text: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 1 — 27 October 2011 Objective data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-40RN;
BLF6G15LS-40RN
BLF6G15L-40RN
6G15LS-40RN
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