Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT MJJ Search Results

    SOT MJJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT MJJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TS7;6 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7766 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 ;6 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Jcab ]mjj_gl ][i[\ceclq Jcab kocl]bcga ][i[\ceclq


    Original
    PDF TS7766 OKN3TUF3868G2 TS7766/

    ghck

    Abstract: No abstract text available
    Text: TS7;6 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7766 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 ;6 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Jcab ]mjj_gl ][i[\ceclq Jcab kocl]bcga ][i[\ceclq


    Original
    PDF TS7766 OKN3TUF3868G2 TS7766/ ghck

    TS76

    Abstract: No abstract text available
    Text: TS7686 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS76<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 76 Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq


    Original
    PDF TS7686 UQ3886 OKN3TUF3868G2 TS7686 TS76

    phl 7 s

    Abstract: phl7 ghck
    Text: TS7<86 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7<<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 7< Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq


    Original
    PDF UQ3886 OKN3TUF3868G2 phl 7 s phl7 ghck

    phl 7 s

    Abstract: LCHG
    Text: 7T8 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT 7T76 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho iho_j ehkk2 bcab _``c]c_g]q Nho e_[d[a_ Nho `hjo[j^ nhel[a_ Jcab ]mjj_gl ][i[\ceclq


    Original
    PDF OKN3TUF3868G2 7T76/ phl 7 s LCHG

    Untitled

    Abstract: No abstract text available
    Text: 7T8 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT 7T76 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho iho_j ehkk2 bcab _``c]c_g]q Nho e_[d[a_ Nho `hjo[j^ nhel[a_ Jcab ]mjj_gl ][i[\ceclq


    Original
    PDF OKN3TUF3868G2 7T76/

    L46C

    Abstract: No abstract text available
    Text: TS7<86 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7<<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 7< Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq


    Original
    PDF UQ3886 OKN3TUF3868G2 L46C

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan
    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363

    ZB1702

    Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.


    OCR Scan
    PDF BUW11F; BUW11AF BUW11F 711062b QG77773 ZB1702 711Dfi2b ZB1-7 ScansUX40

    Untitled

    Abstract: No abstract text available
    Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter


    OCR Scan
    PDF BD131 OT-32 BD132. DD34243 BD132 003424b

    d1694

    Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
    Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base


    OCR Scan
    PDF BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv

    FE10E

    Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
    Text: BD675; 677 BD679; 681; 683 PHILIPS INTERNATIONAL 5bE D • 711005b 0042^^2 7Ö2 M P H I N T- 3J-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.


    OCR Scan
    PDF BD675; BD679; 711005b OT-32 BD676, BD678, BD680, BD682 BD684. BD675 FE10E 8d679 BD676 BD680 BD678 BD679 BD684

    b0330

    Abstract: No abstract text available
    Text: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0


    OCR Scan
    PDF BD330 OT-32 BD329. Lti53T31 7Z62126 bbS3131 D0343S3 B0330 b0330

    41ba

    Abstract: BUW13AF BUW13F UBC098 sot199
    Text: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.


    OCR Scan
    PDF BUW13F; BUW13AF OT199 BUW13F 711002b 71ilGÃ 41ba BUW13AF BUW13F UBC098 sot199

    MO5T

    Abstract: 2TOSG-117 272797 8293 wsa0
    Text: [F ^ @ [D y T Ì P ^ i ^ O i W in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data I Power-saving Idle and Powerdown Modes I User-selectable Configurations


    OCR Scan
    PDF 2930A Three16byte MO5T 2TOSG-117 272797 8293 wsa0

    KC156A

    Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
    Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:


    OCR Scan
    PDF XapfaKOB-57, KC156A ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213