diode MARKING CODE 18A
Abstract: sot 227b diode fast SOT227B
Text: DH2x61-18A Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DH2x61-18A
60747and
20110908b
diode MARKING CODE 18A
sot 227b diode fast
SOT227B
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16a marking
Abstract: No abstract text available
Text: DH2x61-16A Sonic Fast Recovery Diode VRRM = 1600 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-16A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DH2x61-16A
60747and
20110908b
16a marking
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Untitled
Abstract: No abstract text available
Text: DHG50X600NA advanced Sonic Fast Recovery Diode VRRM = 600 V I FAV = 2x 25 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG50X600NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DHG50X600NA
OT-227B
60747and
20130829a
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DH2x60-18A
Abstract: dh2x60
Text: DH2x60-18A Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x60-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DH2x60-18A
60747and
20110908b
DH2x60-18A
dh2x60
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR
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IXXN200N60B3H1
IC110
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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IXYN100N120C3H1
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYN100N120C3H1
IC110
110ns
OT-227B,
E153432
IF110
100N120C3
IXYN100N120C3H1
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IXGN72N60C3H1
Abstract: No abstract text available
Text: Preliminary Technical Information IXGN72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed low Vsat PT IGBTs 40-100 kHz switching = = ≤£ = 600V 52A 2.5V 55ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES
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IXGN72N60C3H1
IC110
OT-227B,
E153432
72N60C3
0-16-08-A
IXGN72N60C3H1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings
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IXXN100N60B3H1
10-30kHz
150ns
OT-227B,
E153432
IF110
100N60B3
12-01-11-B
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Untitled
Abstract: No abstract text available
Text: VBE60-12A HiPerFRED VRRM = 1200 V I DAV = 60 A t rr = 60 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE60-12A Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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VBE60-12A
OT-227B
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20131029a
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Untitled
Abstract: No abstract text available
Text: DSEI2x101-12A FRED VRRM = 1200 V I FAV = 2x 91 A t rr = 40 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DSEI2x101-12A
OT-227B
60747and
20130703a
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Untitled
Abstract: No abstract text available
Text: DSEI2x101-06A FRED VRRM = 600 V I FAV = 2x 96 A t rr = 35 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DSEI2x101-06A
OT-227B
60747and
20130703b
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DPF240X200NA
Abstract: No abstract text available
Text: DPF240X200NA preliminary HiPerFRED² VRRM = 200 V I FAV = 2x 120 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X200NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DPF240X200NA
OT-227B
highF240X200NA
60747and
20131101a
DPF240X200NA
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DPF240X200NA
Abstract: IXYS snubber DIODE sot 227b diode fast DSEI2X121-02A IXYS fast recovery rectifiers
Text: DPF240X200NA advanced HiPerFRED² VRRM = 200 V I FAV = 2x 120 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X200NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DPF240X200NA
DSEI2x121-02A
OT-227B
60747and
20121106a
DPF240X200NA
IXYS snubber DIODE
sot 227b diode fast
DSEI2X121-02A
IXYS fast recovery rectifiers
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DPF240X400NA
Abstract: No abstract text available
Text: DPF240X400NA advanced HiPerFRED² VRRM = 400 V I FAV = 2x 120 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X400NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DPF240X400NA
OT-227B
60747and
20131031a
DPF240X400NA
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
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ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN200N60B3H1
IC110
110ns
OT-227B,
E153432
IF110
50/60Hz
200N60B3
ixxn200n60b3h1
IXXN200N60B3
200n60
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IXXN100N60B3H1
Abstract: No abstract text available
Text: Advance Technical Information IXXN100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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10-30kHz
IXXN100N60B3H1
150ns
IF110
100N60B3
12-01-11-B
IXXN100N60B3H1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C
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IC110
IXXN200N60B3H1
110ns
10-30kHz
OT-227B,
E153432
IF110
200N60B3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN50N120C3H1 VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
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IXGN50N120C3H1
IC110
OT-227B,
E153432
IF110
50N120C3H1
3-01-10-A
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ixgn50n120c3h1
Abstract: g50n IF110 g50n120c3
Text: Advance Technical Information IXGN50N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
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IXGN50N120C3H1
IC110
OT-227B,
E153432
IF110
50N120C3H1
3-01-10-A
ixgn50n120c3h1
g50n
IF110
g50n120c3
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IXGN82N120C3H1
Abstract: IF110 s7900
Text: Advance Technical Information IXGN82N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 58A ≤£ 3.9V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200
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IXGN82N120C3H1
IC110
OT-227B,
E153432
IF110
338B2
IXGN82N120C3H1
IF110
s7900
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IXGN60N60C2D1
Abstract: G60N G60N60 60c2d1 ixgn60N60 2x61-06a 60N60C2 IXGN60N60C2 100A21 g60n60c2
Text: IXGN60N60C2 IXGN60N60C2D1 HiPerFASTTM IGBTs with Diode VCES = IC110 = VCE sat ≤ trr = C2-Class High Speed IGBTs E E 60C2 60C2D1 600V 60A 2.5V 35ns SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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IXGN60N60C2
IXGN60N60C2D1
IC110
60C2D1
OT-227B,
E153432
2x61-06A
IXGN60N60C2D1
G60N
G60N60
60c2d1
ixgn60N60
2x61-06a
60N60C2
IXGN60N60C2
100A21
g60n60c2
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBTs with Diode VCES = IC110 = VCE sat ≤ trr = IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs E E 60C2 60C2D1 600V 60A 2.5V 35ns SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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IC110
IXGN60N60C2
IXGN60N60C2D1
60C2D1
OT-227B,
E153432
2x61-06A
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diode u2 40
Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style
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O-264
O-247
O-268AA
OT-227B
PLUS247TM
ISOPLUS247TM
IXSH24N60BD1
IXSH30N60U1
IXSN62N60U1
IXSN35N100U1*
diode u2 40
48 H diode
DIODE U2 70
IXSH24N60AU1
IXSN35N120AU1
IXSN35N100U1
IXSX35N120AU1
h 48 diode
diode u2 34
ixsn80n60
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