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    SOT 227B Search Results

    SOT 227B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    SOT 227B Price and Stock

    IXYS Corporation IXFN520N075T2

    Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFN520N075T2 Tube 340 10
    • 1 -
    • 10 $30.03
    • 100 $30.03
    • 1000 $30.03
    • 10000 $30.03
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    IXYS Corporation IXFN180N20

    Discrete Semiconductor Modules 200V 180A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXFN180N20 Tube 20 10
    • 1 -
    • 10 $54.27
    • 100 $54.27
    • 1000 $54.27
    • 10000 $54.27
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    IXYS Corporation IXTN400N15X4

    Discrete Semiconductor Modules MSFT N-CH ULTRA JNCT X3 MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXTN400N15X4 Tube 750 10
    • 1 -
    • 10 $42.03
    • 100 $36.88
    • 1000 $35.56
    • 10000 $35.56
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    IXYS Corporation IXGN100N170

    IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXGN100N170 Tube 300 10
    • 1 -
    • 10 $49.77
    • 100 $49.77
    • 1000 $49.77
    • 10000 $49.77
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    IXYS Corporation DSEI2X101-06A

    Rectifiers 600V 2X100A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DSEI2X101-06A Tube 100 10
    • 1 -
    • 10 $26.63
    • 100 $24.6
    • 1000 $24.6
    • 10000 $24.6
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    Find more SOT 227B price and stock on Findchips.com

    SOT 227B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RTO-B

    Abstract: No abstract text available
    Text: RTO-B Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 1, 2, 5, 10, 15, 20, 33, 50, 68, 100, 150, 200, 330, 470 mOhm Toleranz


    Original     		PDF MIL-STD-202 120dB RTO-B-2013-05-16 D-35683 RTO-B

    Untitled

    Abstract: No abstract text available
    Text: RTO-A Bauform SOT 227B ISOTOP / Size SOT 227B (ISOTOP) ISA-PLAN - Präzisionswiderstände / Precision resistors Technische Daten / technical data Widerstandswerte Resistance values 0.5, 1, 2, 3.3, 5, 10, 15, 20, 33, 47, 50, 100 Ohm Toleranz Tolerance 1 %, 5 % < 10 Ohm


    Original     		PDF MIL-STD-202 120dB RTO-A-2013-05-16 D-35683

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXXN100N60B3H1 10-30kHz 150ns OT-227B, E153432 IF110 100N60B3 12-01-11-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR


    Original     		PDF IXXN200N60B3H1 IC110 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3

    DMA150YA1600NA

    Abstract: dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA
    Text: DMA150YA1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Anode Part number DMA150YA1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


    Original     		PDF DMA150YA1600NA OT-227B 60747and 20130128a DMA150YA1600NA dma150 SOT227B package IXYS DMA150YA1600NA DMA150YC1600NA

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF IXYN100N65C3H1 IC110 20-60kHz OT-227B, E153432 IF110 100N65C3 0-24-13-A

    Untitled

    Abstract: No abstract text available
    Text: MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF MCO100-12io1 OT-227B 60747and 20140123a

    CLA110MB1200NA

    Abstract: No abstract text available
    Text: CLA110MB1200NA High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.04 V AC Controlling 1~ full-controlled Part number CLA110MB1200NA Backside: Isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● AC controller for line frequency


    Original     		PDF CLA110MB1200NA OT-227B 60747and 20130408b CLA110MB1200NA

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


    Original     		PDF 20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683

    ixxn110n65

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF 10-30kHz IXXN110N65B4H1 IC110 OT-227B, E153432 IF110 50/60Hz VCE00 110N65B4H1 ixxn110n65

    DMA150YC1600NA

    Abstract: DMA150YA1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


    Original     		PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YC1600NA DMA150YA1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO100-16io1 Thyristor VRRM = 1600 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF MCO100-16io1 OT-227B 60747and 20140123a

    IXYN100N120C3H1

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1

    IXGN72N60C3H1

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGN72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed low Vsat PT IGBTs 40-100 kHz switching = = ≤£ = 600V 52A 2.5V 55ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXGN72N60C3H1 IC110 OT-227B, E153432 72N60C3 0-16-08-A IXGN72N60C3H1

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips


    Original     		PDF DMA150YC1600NA OT-227B 60747and 20130128a DMA150YA1600NA DMA150YC1600NA

    CMA80PD1600NA

    Abstract: No abstract text available
    Text: CMA80PD1600NA advanced Thyristor VRRM = 2x 1600 V I TAV = 80 A VT = 1.29 V Phase leg Part number CMA80PD1600NA Backside: isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF CMA80PD1600NA OT-227B 60747and CMA80PD1600NA

    Untitled

    Abstract: No abstract text available
    Text: MCO150-12io1 Thyristor VRRM = 1200 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF MCO150-12io1 OT-227B 60747and 20140123a

    Untitled

    Abstract: No abstract text available
    Text: MCO150-16io1 Thyristor VRRM = 1600 V I TAV = 158 A VT = 1.37 V Single Thyristor Part number MCO150-16io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF MCO150-16io1 OT-227B 60747and 20140123a

    DSA300I45NA

    Abstract: No abstract text available
    Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


    Original     		PDF DSA300I45NA OT-227B 60747and 20120907a DSA300I45NA

    Untitled

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


    Original     		PDF DSA300I200NA OT-227B 60747and 20120907a

    DSA300I200NA

    Abstract: No abstract text available
    Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc


    Original     		PDF DSA300I200NA OT-227B 60747and 20120907a DSA300I200NA

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYN120N120C3 1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 120A 3.20V 96ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions E Maximum Ratings VCES


    Original     		PDF IXYN120N120C3 IC110 OT-227B, E153432 120N120C3 9P-C91)

    DMA150YA1600NA

    Abstract: DMA150YC1600NA
    Text: DMA 150 YC 1600 NA tentative VRRM = I DAV = VF = Standard Rectifier half 3~ Bridge, Common Cathode Part number 1600 V 150 A 1.12 V 1 3 2 4 Backside: isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline


    Original     		PDF OT-227B 60747and DMA150YA1600NA DMA150YC1600NA

    CLA100PD1200NA

    Abstract: CLA60PD1200NA
    Text: CLA60PD1200NA High Efficiency Thyristor VRRM = 2x 1200 V I TAV = 60 A VT = 1.09 V Phase leg Part number CLA60PD1200NA Backside: Isolated 4 3 1 2 Features / Advantages: Applications: Package: SOT-227B minibloc ● Thyristor for line frequency ● Planar passivated chip


    Original     		PDF CLA60PD1200NA OT-227B 60747and 20130408b CLA100PD1200NA CLA60PD1200NA