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    IXXN110N65 Price and Stock

    IXYS Corporation IXXN110N65C4H1

    IGBT MOD 650V 210A 750W SOT227B
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    DigiKey IXXN110N65C4H1 Tube 1
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    Mouser Electronics IXXN110N65C4H1
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    TTI IXXN110N65C4H1 Tube 1
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    TME IXXN110N65C4H1 1
    • 1 $35.39
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    IXYS Corporation IXXN110N65B4H1

    IGBT MOD 650V 215A 750W SOT227B
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    DigiKey IXXN110N65B4H1 Tube 1
    • 1 $28.83
    • 10 $25.616
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    Mouser Electronics IXXN110N65B4H1
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    TTI IXXN110N65B4H1 Tube 300
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    TME IXXN110N65B4H1 1
    • 1 $35.39
    • 10 $28.08
    • 100 $28.08
    • 1000 $28.08
    • 10000 $28.08
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    IXXN110N65 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXXN110N65B4H1 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 650V 215A 750W SOT227B Original PDF
    IXXN110N65C4H1 IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT 650V 210A 750W SOT227B Original PDF

    IXXN110N65 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A

    IXXN110N65C4H1

    Abstract: E8 55A DIODE ixxn110n65c z 683
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings


    Original     		PDF 20-60kHz IXXN110N65C4H1 IC110 OT-227B, E153432 IF110 50/60Hz 100N65C4H1 IXXN110N65C4H1 E8 55A DIODE ixxn110n65c z 683

    ixxn110n65

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings


    Original     		PDF 10-30kHz IXXN110N65B4H1 IC110 OT-227B, E153432 IF110 50/60Hz VCE00 110N65B4H1 ixxn110n65

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		PDF DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ