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    coax a62

    Abstract: CAT24 24C02 catalyst
    Text: Direct Rambus RIMM™ Module Specification Version 1.0 Copyright 2000 Rambus Inc. All rights reserved. Rambus, RDRAM, and the Rambus Logo are registered trademarks of Rambus Inc. Direct Rambus, RIMM, SORIMM, and Direct RDRAM are trademarks of Rambus Inc.


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    PDF SL-0006-100 coax a62 CAT24 24C02 catalyst

    Untitled

    Abstract: No abstract text available
    Text: SMI128RDSAD20 SMI144RDSAD20 July 23, 2002 Orderable Part Numbers Module Part Number Description Module Speed SMI128RDSAD20 128MB, RAMBUS 160-pin SORIMM, 16Mx16 Based 31.25mm. 45ns/800MHz SMI144RDSAD20 144MB, RAMBUS 160-pin SORIMM, 16Mx16 Based 31.25mm. 45ns/800MHz


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    PDF SMI128RDSAD20 SMI144RDSAD20 SMI144RDSAD20 128MB, 160-pin 16Mx16 144MB,

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


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    PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


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    PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    144MB

    Abstract: B641 High Connection Density
    Text: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


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    PDF 128Mb 144Mb HS064N04E HS064N04D HS064N04C HS064N04B HS064E04E HS064E04D HS064E04C HS064E04B 144MB B641 High Connection Density

    MC-4R64FKE8S

    Abstract: PD488588 PD488588FF
    Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


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    PDF MC-4R64FKE8S M01E0107 E0140N30 MC-4R64FKE8S PD488588 PD488588FF

    Direct-Rambus-RIMM

    Abstract: MC-4R128FKE6D PD488588 PD488588FF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    PDF MC-4R128FKE6D 128M-BYTE 64M-WORD 16-BIT) MC-4R128FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Direct-Rambus-RIMM PD488588 PD488588FF

    EL B17

    Abstract: No abstract text available
    Text: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION


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    PDF UGD128R16 08U6J 256/288MB 18bits 800MHz 600MHz 160-Pin UGD128R1608U6J-L6/G6/T6 256MB 128Mx16) EL B17

    SMI064RBSBD01

    Abstract: SMI072RBSBD01 RSL 17
    Text: SMI064RBSBD01 SMI072RBSBD01 September 17, 2001 Orderable Part Numbers Module Part Number Cycle Time Speed SMI064RBSBD01 45ns 800MHz SMI072RBSBD01 45ns 800MHz Revision History • September 17, 2001 Modifed datasheet part number from SMI064/72RBSAD01 to SMI064/72RBSBD01


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    PDF SMI064RBSBD01 SMI072RBSBD01 800MHz SMI064/72RBSAD01 SMI064/72RBSBD01 604-39R SMI064RBSBD01 SMI072RBSBD01 RSL 17

    RG25

    Abstract: OKI RDRAM OKI RDRAM 18
    Text: SMU128UBUAUUU SMU144UBUAUUU March 2, 2001 Revision History • March 2, 2001 Datasheet updated. • July 11, 2000 Corrected table on page 10. • June 12, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


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    PDF SMU128UBUAUUU SMU144UBUAUUU 128/144MByte 8Mx16/18 160-pin RG25 OKI RDRAM OKI RDRAM 18

    200-ball

    Abstract: A79 marking code MN18R1628EF0 samsung resitor
    Text: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004


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    PDF MN18R1624 MP18R1624 288Mbit 16Mx18) 288Mb 16K/32ms 200-ball A79 marking code MN18R1628EF0 samsung resitor

    EBR25UC8ABFD-8C

    Abstract: EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD
    Text: DATA SHEET 256MB Direct Rambus  DRAM RIMM  Module EBR25UC8ABFD 128M words x 16 bits Description Features The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including


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    PDF 256MB EBR25UC8ABFD 1066MHz/800MHz 925mm M01E0107 E0317E20 EBR25UC8ABFD-8C EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF 600MHz DL-0118-07 direct rdram rambus 1200

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


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    PDF 512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    PDF MC-4R128FKE8D 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8D PD488588) 600MHz, 711MHz 800MHz M01E0107

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB 32-bit Direct Rambus DRAM RIMM  Module MC-4R512FKK8K 128M words x 18 bits × 2 channels Description Features The 32-bit Direct Rambus RIMM module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications


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    PDF 512MB 32-bit MC-4R512FKK8K 800MHz 925mm M01E0107 E0254N10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal


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    PDF MC-4R64FKE8S-840 M01E0107 E0259N10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct RambusTM DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking


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    PDF MC-4R128FKE8S 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8S PD488588) 800MHz M01E0107

    Elpida Memory

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D-840 Direct Rambus DRAM RIMMTM Module 512M-BYTE 256M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other


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    PDF MC-4R512FKE6D-840 512M-BYTE 256M-WORD 16-BIT) MC-4R512FKE6D PD488588) 600MHz, 711MHz 800MHz M01E0107 Elpida Memory

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S-840 Direct Rambus DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking


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    PDF MC-4R128FKE8S-840 128M-BYTE 64M-WORD 18-BIT) MC-4R128FKE8S PD488588) 800MHz M01E0107 E0258N10

    a65 1021

    Abstract: No abstract text available
    Text: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)


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    PDF MR16R1622 MR18R1622 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb a65 1021

    direct rdram rac

    Abstract: No abstract text available
    Text: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit 32 Bit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 Bit RIMM Module Datasheet


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    PDF MD16R1624 MD18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) direct rdram rac

    DRAM material declaration

    Abstract: No abstract text available
    Text: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004


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    PDF MR16R1624 MR18R1624 256/288Mbit 16Mx16) 256Mb 16K/32ms 16Mx18) 288Mb DRAM material declaration

    MARKING CODE 11gb

    Abstract: No abstract text available
    Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


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    PDF MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb