Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR H 7 Search Results

    SMD TRANSISTOR H 7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR H 7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistor 68f

    Abstract: smd transistor marking da 68g diode bcw68f smd BCW67B marking 68g smd diode DH BCW67 BCW67A BCW68
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking


    Original     		PDF OT-23 BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67A, SMD Transistor 68f smd transistor marking da 68g diode bcw68f smd BCW67B marking 68g smd diode DH BCW67 BCW67A BCW68

    marking 68g

    Abstract: smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG


    Original     		PDF OT-23 BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67A, marking 68g smd transistor marking da bcw67a smd transistor 556 smd smd transistor H F BCW67A BCW67B BCW68 BCW68F BCW68G

    Untitled

    Abstract: No abstract text available
    Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector


    Original     		PDF TCNT2000 TCNT2000 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TCNT2000

    Abstract: Reflective Optical Sensor
    Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector


    Original     		PDF TCNT2000 TCNT2000 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Reflective Optical Sensor

    BCW Smd transistor

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P–N–P transisto r Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G = DG


    Original     		PDF OT-23 BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67A, BCW Smd transistor

    Untitled

    Abstract: No abstract text available
    Text: STD6528EF NPN Silicon Transistor Application PIN Connection • Micom Direct drive and swit ching Applicat ion Features 3 • Very low sat urat ion volt age: VCE sat = 0.2V ( Max.) @ I C= 50m A, I B= 5m A • High DC current gain: h FE= 1000~ 2500 • Sm all size SMD package


    Original     		PDF STD6528EF OT-523F KSD-T5E003-001

    transistor A25 SMD

    Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
    Text: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo­ transistor for both reverse and top


    OCR Scan     		PDF CPT-290 100ST2 L-201IR CL-201 transistor A25 SMD transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314

    Untitled

    Abstract: No abstract text available
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum ’\ .* y 7 M 7 x ^ :ÿyyx$-c±miBi • Features 1. Developed as a chip type SMD phot-transistor for both reverse and top surface mounting 2. Small and square size, dim ensions : 3 ,2 L x 1.6(W)X1,1 (H)mm 2. ^- -Î;ïl3;3.e(L)xl.6(W)xl.i(H)


    OCR Scan     		PDF CPT-S30' 950nmlRftLcfc CL-200IR

    5B smd transistor data

    Abstract: TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853
    Text: • bbS3T31 0025675 L20 H A P X N AUER PHILIPS/DISCRETE PMBT5088 L7E D 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic SOT-23 envelope intended for low-noise input stages in audio equipment, when using SMD technology. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3T31 PMBT5088 OT-23 5B smd transistor data TRANSISTOR SMD MARKING CODE 5b 5B SMD TRANSISTOR TRANSISTOR D 1853

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b0D3 PZT3904 OT-223)

    smd transistor kn

    Abstract: PZT3906
    Text: •I bbSBTBl OQELDOb 6fl3 H A P X PZT3906 b?E T> N AUER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF PZT3906 OT-223) 10x10-" smd transistor kn PZT3906

    1N916

    Abstract: PZT3904 smd transistor 3t
    Text: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b003 PZT3904 OT-223) 1N916^ 1N916( 7Z74968 1N916 PZT3904 smd transistor 3t

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF 71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN

    smd transistor xf

    Abstract: smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F
    Text: P h ilip ^ e m ic o n d u c to r ^ ^ B i 711D Ö 2b G D b 'iB b ö 142 H 1 P H IN ^ P jjo d u c ^ p e c ific a tjo n UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION BLT50 QUICK REFERENCE DATA


    OCR Scan     		PDF 711062b BLT50 OT223 PINNING-SOT223 MEA222 UEA223 smd transistor xf smd 809 x transistor blt50 4F smd transistor transistor 2222 smd transistor 809 philips Trimmer 60 pf transistor 3B1 smd UHF TRANSISTOR transistor 4F

    TRANSISTOR SMD MARKING CODE 5b

    Abstract: transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR
    Text: Philips Semiconductors 711Dfl2h DDbTBT? 743 M P H IN Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • QUICK REFERENCE DATA RF performance at Ts < 60 °C In a common emitter class-B test circuit see note 1 . Emitter-ballasting resistors for


    OCR Scan     		PDF 7110fl2tj BLU86 OT223 OT223 TRANSISTOR SMD MARKING CODE 5b transistor smd CF RQ TRANSISTOR SMD MARKING CODE KF smd transistor marking L6 NPN SMD Transistor 7z transistor marking smd 7z 5B smd transistor data transistor SMD MARKING CODE HF smd marking code SSs SMD MARKING GP TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA


    OCR Scan     		PDF b53T31 BLT80

    MARKING SMD transistor 12X

    Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
    Text: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 7Z94272 7Z21S40 MARKING SMD transistor 12X smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U

    TRANSISTOR SMD MARKING CODE pKX

    Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
    Text: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed


    OCR Scan     		PDF PMBF170 200rnA bbS3T31 TRANSISTOR SMD MARKING CODE pKX TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170

    Untitled

    Abstract: No abstract text available
    Text: uim 1. ^ymy^^y'Jxs>-c±mR uTmmm^m0 • Features 1. Developed as a chip thpe SMD phot-transistor for both reverse and top surface mounting. 2. ^ffi\ -^IS3.8(L xl.6(W)xl.l(H) 2. Small and square size, dimensions : 3 .2 (L)x 1.6(W)X1.1 (H)mm. m < D / im - n m v '( X o


    OCR Scan     		PDF T-230

    Untitled

    Abstract: No abstract text available
    Text: C P T - 1 8 2 2 / U - X Surface Mountable Chip Photo-transistor CPT-182 Series W M / Features — r Developed as a chip tyoe SMD photo­ transistor for both right-angle and upright uses Small and square size, dimensions' 3.2 L X2.4(W ) x 2.4(H)mm 2. ^ ^ È t t 3 . 2 ( L ) X 2 . 4 ( W ) x 2 . 4


    OCR Scan     		PDF CPT-182 950nmlR CL-201 CL-201IR

    CL-200IR

    Abstract: CPT181S CPT-181S
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR • ft» ■ Features 2. ^ Jfi^ jilS 3 .2 L x p .4 (W )x 2 .4 (H ) 1. Developed as a chip type SMD photo-tran­ sistor for both right-angle and upright uses. 2. Small and square size, dimensions : 3.2(L)x 2.4(W)x2.4(H)mm. 3. Automatic mounting by chip mounter avail­


    OCR Scan     		PDF CPT-181 CL-200IR Ta-25C) CL-200IR CPT181S CPT-181S

    Untitled

    Abstract: No abstract text available
    Text: • Features ■ f t * CHIP PHOTO-TRANSISTOR 1. Developed as a chip type SMD photo-tran­ S. sistor for both right-angie and upright uses z m m & im m o tt3.2 L xe.4(W) xg.4(H) CmSENSOR 2. Small and square size, dim ensions : 3.2 (L )x 2.4(W )x2.4(H)m m m tm - n r n v - ^ iX c


    OCR Scan     		PDF CL-200IR

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		PDF BLT81 OT223

    smd transistor e7

    Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
    Text: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see


    OCR Scan     		PDF bbS3S31 BLT50 OT223 OT223 MEA222 UBtM51 UEA223 smd transistor e7 smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls