DIODE W1 SMD
Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
Text: TSS0230L SMD Schottky Barrier Diode Small Signal Diode 0402（DFN1006） Features Halogen free low forward voltage Designed for mounting on small surface Extremely thin/leadless package Majority carrier conduction Green compound Halogen free with suffix "G" on
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TSS0230L
0402DFN1006
C/10s
MIL-STD-202,
DIODE W1 SMD
DIODE B12
B12 DIODE
smd diode code B12
W1 diode
diode w1
smd diode w1
smd diode b12
smd diode code A
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Untitled
Abstract: No abstract text available
Text: UVLED-365-330-SMD TECHNICAL DATA High Power UVLED, SMD Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Absolute Maximum Ratings Ta=25°C
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UVLED-365-330-SMD
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UV-LED
Abstract: No abstract text available
Text: UVLED-385-400-SMD TECHNICAL DATA High Power UVLED, SMD Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Absolute Maximum Ratings Ta=25°C
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UVLED-385-400-SMD
UV-LED
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Untitled
Abstract: No abstract text available
Text: SMD Schottky Barrier Diode CDBB820-G THRU CDBB860-G RoHS Device Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A SMB Features: Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
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CDBB820-G
CDBB860-G
MIL-S-19500/228
JEDECDO-214AA
MIL-STD-750,
300us
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smd schottky diode marking 72
Abstract: SS84 CDBG820-G CDBG830-G CDBG840-G CDBG860-G
Text: SMD Schottky Barrier Diode CDBG820-G THRU CDBG860-G RoHS Device Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A Features: G package Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
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CDBG820-G
CDBG860-G
MIL-S-19500/228
MIL-STD-750,
300us
smd schottky diode marking 72
SS84
CDBG830-G
CDBG840-G
CDBG860-G
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RJ45 LAN ESD
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
RJ45 LAN ESD
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smd marking gc5
Abstract: L07E
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
smd marking gc5
L07E
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L07ESDL5V0C3
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
L07ESDL5V0C3
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtmm o u t lin e Package ! E-pack DE5L60 U n ii Im m 600V 5A Feature • SMD • High Voltage • trr=50ns SMD ia U E E trr=50ns • • • • • PFC - \s wm.OA FA I 51l 6 Dill*rtidi M a in U se PFC(Power Factor Correction)
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DE5L60
J532-1
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X4 DIODE SMD
Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use
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STO-220
DF20SC4M
X4 DIODE SMD
smd diode marking LM
smd diode marking B3
smd zm diode
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TRANSISTOR SMD MARKING CODE w6
Abstract: SMD TRANSISTOR MARKING 5H
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 01 5 • SMD Zener Diode SOT-23 Case 350mW cen T - W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
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OT-23
350mW
CMPZ5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE w6
SMD TRANSISTOR MARKING 5H
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Diode SOT-23 marking 27
Abstract: TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF
Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 015 • cen T - SMD Zener Diode SOT-23 Case 350mW W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,
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OT-23
350mW
CMPZ5221B
MOT-23
OT-89
OT-143
OT-223
Diode SOT-23 marking 27
TRANSISTOR SMD MARKING CODE w6
Zener diode smd marking code 51 y
Zener diode smd marking code 2A
2A transistor smd SOT-23
Zener Diode SOT-23 marking B
TRANSISTOR SMD MARKING CODE y12
SMD Transistor Y12
TRANSISTOR SMD MARKING CODE 81c
TRANSISTOR SMD MARKING CODE LF
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Zener diode smd marking sot223
Abstract: TRANSISTOR SMD MARKING CODE LF melf zener diode smd SMD SK TRANSISTOR smd dual diode code 68 Zener diode smd marking code 51 y marking sk sot-23 SMD TRANSISTOR MARKING 1B sod-80 with black band SMD DIODE zener SOT89
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ì L B DODOSlb Tifi ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
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OD-80
500mW
CLL5221B
OT-23
OT-89
OT-143
OT-223
Zener diode smd marking sot223
TRANSISTOR SMD MARKING CODE LF
melf zener diode smd
SMD SK TRANSISTOR
smd dual diode code 68
Zener diode smd marking code 51 y
marking sk sot-23
SMD TRANSISTOR MARKING 1B
sod-80 with black band
SMD DIODE zener SOT89
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TRANSISTOR SMD MARKING CODE 1K
Abstract: DIODE smd marking code UM 41 2/DIODE smd marking code UM 41
Text: CENTRAL SEMICONDUCTOR SDE D • n ù T ìL B DODOSlb T i f i ■ CEN SMD Zener Diode SO D -80 Case 500m W U.S. Specification Preferred Series The Central Semiconductor CLL5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial,
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CLL5221B
OT-143
OT-223
TRANSISTOR SMD MARKING CODE 1K
DIODE smd marking code UM 41
2/DIODE smd marking code UM 41
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SHINDENGEN DIODE
Abstract: DE10S3L
Text: S U S x /W 7. , V 3 . y _i _ Sur f ace Mounting Device *# 8 1 Diode 7 Schottky Barrier Diode . OUTLINE DIMENSIONS DE10S3L 30 V 10A • SMD • T j 15 0 t ; • ftV f = 0 45V • PnRRM J ''K 3 > V X lS 6 Ü
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DE10S3L
SHINDENGEN DIODE
DE10S3L
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V
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D2FK60
J532-1)
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diode smd marking jy
Abstract: smd marking 9S
Text: Schottky Barrier Diode Single Diode mtmm M2FM3 o u tlin e 30V 6A Feature »/JvSÜSMD »Small SMD • Tj=150°C > V f=0.46V >Tj=150°C » Low V f=0.46V >S lR = 0 .2 m A ' Low Ir=0.2 itiA Main Use • K ï / J J —jSJÜKilt • Reverse connect protection for
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smd diode marking U10
Abstract: Diode marking TY smd diode marking B3 smd diode HB
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation
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STO-220
DF30SC4M
smd diode marking U10
Diode marking TY
smd diode marking B3
smd diode HB
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Prelim inary »pecification Silicon planar epitaxial high-speed switching diode FEATURES BAS216 QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed VR continuous reverse voltage 75 V V rrm repetitive peak reverse voltage 85
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BAS216
BAS216
OD110.
msas66
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diode tfk s 220
Abstract: TFK 490 tfk 123 7 TFK S
Text: Schottky Barrier Diode Twin Diode mtm DF25SC6M 60V m U nit-m m Package : STO -220 W eight 1.5g T y p P y K L l°-(ffl) 5A 10.2 Feature a <SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SM D • Tj=150°C • P OUTLINE rrsm 4.7 Main Use
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DF25SC6M
diode tfk s 220
TFK 490
tfk 123 7
TFK S
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53R31 QDEb^Sb S47 H A P X bRE D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse
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bb53R31
BAS16W
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10SC9
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC9 90V m U n it-m m W eight 1.5g T y p u ^ h à L Ì°-(M ) 10.2 DA Feature a SM D • SMD < • Tj=150°C 1 Tj=150°C • P rrsm 1 P rrs m R ating 1 High lo Rating -S m a ll-P K G 4.7
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STO-220
DF10SC9
10SC9
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE » bb53R31 D D S b n ? DbT « A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA
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bb53R31
BAW56W
OT323
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Untitled
Abstract: No abstract text available
Text: • bb53T31 00EH3i»7 2b4 * A P X N AflER PHILIPS/DISCRETE BAT74 b7E » J V SCHOTTKY BARRIER DIODE Two separate silicon epitaxial Schottky barrier diodes with an integrated p-n junction protection ring in one microminiature SOT-143 envelope, intended for surface mounting SMD technology .
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bb53T31
00EH3iÂ
BAT74
OT-143
bbS3131
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