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    SISA10DN Price and Stock

    Vishay Siliconix SISA10DN-T1-GE3

    MOSFET N-CH 30V 30A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SISA10DN-T1-GE3 Cut Tape 8,802 1
    • 1 $1.57
    • 10 $0.992
    • 100 $1.57
    • 1000 $0.474
    • 10000 $0.474
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    SISA10DN-T1-GE3 Digi-Reel 8,802 1
    • 1 $1.57
    • 10 $0.992
    • 100 $1.57
    • 1000 $0.474
    • 10000 $0.474
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    SISA10DN-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.41606
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    RS SISA10DN-T1-GE3 Bulk 3,000
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    • 10000 $1.1
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    Vishay Intertechnologies SISA10DN-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISA10DN-T1-GE3)
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    Avnet Americas SISA10DN-T1-GE3 Reel 12 Weeks 3,000
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    • 10000 $0.41225
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    Mouser Electronics SISA10DN-T1-GE3 3,955
    • 1 $1.19
    • 10 $0.839
    • 100 $0.585
    • 1000 $0.434
    • 10000 $0.429
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    Newark SISA10DN-T1-GE3 Cut Tape 3,000
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    • 1000 $0.57
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    SISA10DN-T1-GE3 Reel 3,000
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    • 10000 $0.399
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    Bristol Electronics SISA10DN-T1-GE3 979
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    Quest Components SISA10DN-T1-GE3 783
    • 1 $1.5
    • 10 $1.5
    • 100 $0.75
    • 1000 $0.6
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    TTI SISA10DN-T1-GE3 Reel 3,000
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    • 10000 $0.416
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    TME SISA10DN-T1-GE3 1
    • 1 $0.949
    • 10 $0.783
    • 100 $0.614
    • 1000 $0.488
    • 10000 $0.488
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    EBV Elektronik SISA10DN-T1-GE3 13 Weeks 3,000
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    SISA10DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SISA10DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A 1212-8 Original PDF

    SISA10DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiSA10DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiSA10DN AN609, 1775m 7165u 3341m 6926m 5118m 0642m 6197m 0233u

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiSA10DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiSA10DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    63819

    Abstract: No abstract text available
    Text: New Product SiSA10DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30 0.0050 at VGS = 4.5 V 30 Qg (Typ.) 15.4 nC PowerPAK 1212-8 APPLICATIONS • High Power Density DC/DC


    Original     		PDF SiSA10DN SiSA10DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 63819

    Untitled

    Abstract: No abstract text available
    Text: New Product SiSA10DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30 0.0050 at VGS = 4.5 V 30 Qg (Typ.) 15.4 nC PowerPAK 1212-8 APPLICATIONS • High Power Density DC/DC


    Original     		PDF SiSA10DN SiSA10DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiSA10DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30 0.0050 at VGS = 4.5 V 30 Qg (Typ.) 15.4 nC PowerPAK 1212-8 APPLICATIONS • High Power Density DC/DC


    Original     		PDF SiSA10DN SiSA10DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiSA10DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30 0.0050 at VGS = 4.5 V 30 Qg (Typ.) 15.4 nC PowerPAK 1212-8 APPLICATIONS • High Power Density DC/DC


    Original     		PDF SiSA10DN SiSA10DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		PDF VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs