Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIS478DN Search Results

    SF Impression Pixel

    SIS478DN Price and Stock

    Vishay Siliconix SIS478DN-T1-GE3

    MOSFET N-CH 30V 12A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS478DN-T1-GE3 Digi-Reel 1
    • 1 $0.57
    • 10 $0.57
    • 100 $0.57
    • 1000 $0.57
    • 10000 $0.57
    		Buy Now
    SIS478DN-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SIS478DN-T1-GE3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIS478DN-T1-GE3

    N-Channel 30-V (D-S) Mosfet |Vishay SIS478DN-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIS478DN-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SIS478DN-T1-GE3 Cut Tape 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.382
    • 10000 $0.382
    		Buy Now

    SIS478DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS478DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 1212-8 Original PDF

    SIS478DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS478DN 2002/95/EC SiS478DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS478DN 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS478DN 2002/95/EC SiS478DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    151801

    Abstract: 28604 AN609 1.4461
    Text: SiS478DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiS478DN AN609, 8430u 1922u 1967m 0507m 2230m 2910m 2132m 01-Sep-10 151801 28604 AN609 1.4461

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS478DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS478DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS478DN 2002/95/EC SiS478DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS478DN 2002/95/EC SiS478DN-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836