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    SIS472ADN Price and Stock

    Vishay Siliconix SIS472ADN-T1-GE3

    MOSFET N-CH 30V 24A PPAK1212-8
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    DigiKey SIS472ADN-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIS472ADN-T1-GE3

    Trans MOSFET N-CH 30V 24A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS472ADN-T1-GE3)
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    Avnet Americas SIS472ADN-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SIS472ADN-T1-GE3 2,895
    • 1 $0.47
    • 10 $0.399
    • 100 $0.298
    • 1000 $0.181
    • 10000 $0.138
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    Newark SIS472ADN-T1-GE3 Cut Tape 2,935 5
    • 1 $0.498
    • 10 $0.427
    • 100 $0.326
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    SIS472ADN-T1-GE3 Reel 3,000
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    TTI SIS472ADN-T1-GE3 Reel 3,000
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    TME SIS472ADN-T1-GE3 1
    • 1 $0.778
    • 10 $0.327
    • 100 $0.259
    • 1000 $0.234
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    EBV Elektronik SIS472ADN-T1-GE3 21 Weeks 3,000
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    SIS472ADN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS472ADN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 24A POWERPAK1212 Original PDF

    SIS472ADN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm


    Original     		PDF SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    62639

    Abstract: No abstract text available
    Text: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS472ADN AN609, 2962u 4146u 8244m 3748m 3513m 5716m 8642m 25-Jun-12 62639

    Untitled

    Abstract: No abstract text available
    Text: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm


    Original     		PDF SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS472ADN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS472ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm


    Original     		PDF SiS472ADN SiS472ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836