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    Vishay Siliconix SIS407DN-T1-GE3

    MOSFET P-CH 20V 25A PPAK1212-8
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    DigiKey SIS407DN-T1-GE3 Cut Tape 43,081 1
    • 1 $1.53
    • 10 $0.967
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    • 1000 $0.46088
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    SIS407DN-T1-GE3 Digi-Reel 43,081 1
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    SIS407DN-T1-GE3 Reel 42,000 3,000
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    RS SIS407DN-T1-GE3 Bulk 3,000
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    New Advantage Corporation SIS407DN-T1-GE3 3,000 1
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    Vishay Siliconix SIS412DN-T1-GE3

    MOSFET N-CH 30V 12A PPAK1212-8
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    DigiKey SIS412DN-T1-GE3 Reel 36,000 3,000
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    RS SIS412DN-T1-GE3 Bulk 3,000
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    Quest Components SIS412DN-T1-GE3 327
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    Vishay Siliconix SIS472DN-T1-GE3

    MOSFET N-CH 30V 20A PPAK1212-8
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    DigiKey SIS472DN-T1-GE3 Cut Tape 17,574 1
    • 1 $1.09
    • 10 $0.679
    • 100 $1.09
    • 1000 $0.31153
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    SIS472DN-T1-GE3 Digi-Reel 17,574 1
    • 1 $1.09
    • 10 $0.679
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    • 1000 $0.31153
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    SIS472DN-T1-GE3 Reel 12,000 3,000
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    Vishay Siliconix SIS406DN-T1-GE3

    MOSFET N-CH 30V 9A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS406DN-T1-GE3 Reel 6,000 3,000
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    Vishay Siliconix SIS435DNT-T1-GE3

    MOSFET P-CH 20V 30A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS435DNT-T1-GE3 Digi-Reel 5,668 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
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    SIS435DNT-T1-GE3 Cut Tape 5,668 1
    • 1 $1.17
    • 10 $0.734
    • 100 $1.17
    • 1000 $0.3395
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    SIS435DNT-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.29524
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    New Advantage Corporation SIS435DNT-T1-GE3 9,000 1
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    • 10000 $0.3231
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    Find more SIS4 price and stock on Findchips.com

    SIS4 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS4000 Sanyo Semiconductor CCD Camera Modules Original PDF
    SIS402DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 1212-8 Original PDF
    SIS406DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A 1212-8 PPAK Original PDF
    SIS407ADN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A 1212-8 PPAK Original PDF
    SIS407DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 25A 1212-8 PPAK Original PDF
    SIS410DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A PPAK 1212-8 Original PDF
    SIS412DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 1212-8 PPAK Original PDF
    SIS413DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 18A PPAK 1212-8 Original PDF
    SIS414DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A 1212-8 PPAK Original PDF
    SIS415DNT-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 35A 1212-8 Original PDF
    SIS424DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A PPAK 1212-8 Original PDF
    SIS426DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A 1212-8 Original PDF
    SIS427EDN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A 1212-8 Original PDF
    SIS429DNT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 20A POWERPAK1212 Original PDF
    SIS43 Unknown Small Size, Low Profile SMD type Original PDF
    SIS43 Xinwang Electronics SMT Power Inductor Original PDF
    SIS430DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 35A PPAK 1212-8 Original PDF
    SIS43-100 Unknown Small Size, Low Profile SMD type Original PDF
    SIS43-101 Delta Electronics Small Size Low Profile SMD type Original PDF
    SIS43-102 Delta Electronics Small Size Low Profile SMD type Original PDF

    SIS4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS454DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


    Original     		SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () Max. ID (A) 0.0071 at VGS = -10 V -18 a 0.0090 at VGS = -4.5 V -18 a 0.0125 at VGS = -2.5 V -18 a Qg (Typ.) 57.5 nC • TrenchFET Gen III P-Channel power MOSFET


    Original     		SiS447DN SiS447DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    1R0-R

    Abstract: N120 n121 transistor N2R2 Transistor N121 N680 n5r6 2R2R N121
    Text: SHIELDED SURFACE MOUNT POWER INDUCTOR E & E Magnetic Products Limited Drum Type, SIS4D18 Series Magnetically Shielded Miniature in size and high energy storage Ideal for high current requirements of notebook, video recorders and other DC-DC conversion applications


    Original     		SIS4D18 SIS4D18N-1R0 SIS4D18N-1R0R SIS4D18N-2R2 SIS4D18N-2R2R SIS4D18N-2R7 SIS4D18N-2R7R PI051 1R0-R N120 n121 transistor N2R2 Transistor N121 N680 n5r6 2R2R N121 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS402DN 2002/95/EC SiS402DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS436DN SiS436DN-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		SiS436DN SiS436DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS430DN SiS430DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS478DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.020 at VGS = 10 V 12 0.030 at VGS = 4.5 V 12 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiS478DN 2002/95/EC SiS478DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiS472DN

    Abstract: SIS472DN-T1-GE3
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11 PDF

    35-AG

    Abstract: No abstract text available
    Text: SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.006 at VGS = 10 V 35 0.008 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		SiS402DN 2002/95/EC SiS402DN-T1-GE3 11-Mar-11 35-AG PDF

    sis430dn

    Abstract: No abstract text available
    Text: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiS430DN 18-Jul-08 PDF

    68851

    Abstract: 11671 8326 AN609 SiS426DN
    Text: SiS426DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS426DN AN609, 16-Jul-08 68851 11671 8326 AN609 PDF

    SiS432DN-T1-GE3

    Abstract: No abstract text available
    Text: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS432DN SiS432DN-T1-GE3 18-Jul-08 PDF

    69053

    Abstract: AN609 43526
    Text: SiS430DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS430DN AN609, 04-Nov-08 69053 AN609 43526 PDF

    AN609

    Abstract: No abstract text available
    Text: SiS432DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS432DN AN609, 21-Oct-08 AN609 PDF

    74537

    Abstract: 4532 MOSFET AN609
    Text: SiS436DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS436DN AN609, 06-Feb-09 74537 4532 MOSFET AN609 PDF

    30344

    Abstract: "30344" datasheet 7485 bosch+30344 IC+BOSCH+30344 7485 DATASHEET C 4429 transistor C 4429 AN609 SiS412DN
    Text: SiS412DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS412DN AN609, 27-Oct-08 30344 "30344" datasheet 7485 bosch+30344 IC+BOSCH+30344 7485 DATASHEET C 4429 transistor C 4429 AN609 PDF

    SIS426DN-T1-GE3

    Abstract: SiS426DN
    Text: New Product SiS426DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0042 at VGS = 10 V 35g 0.0058 at VGS = 4.5 V g VDS (V) 20 35 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested


    Original     		SiS426DN SiS426DN-T1-GE3 150lectual 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHIELDED SURFACE MOUNT POWER INDUCTOR E & E Magnetic Products Limited Drum Type, SIS4040ZX Series Low Profile Magnetically Shielded Ideal for mobile phone, PDA, Mp3, DSC/DVC, Portable DVD, etc as DC-DC converter Inductors applications Custom inductance value is available


    Original     		SIS4040ZX SIS4040BN-3R3R SIS4040BN-3R9R SIS4040BN-4R7R PI210 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiS436DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS488DN Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () (Max.) ID (A)f 0.0055 at VGS = 10 V 40g 0.0075 at VGS = 4.5 V 40g • • • • Qg (Typ.) 9.8 nC PowerPAK 1212-8 TrenchFET® Power MOSFET 100 % Rg and UIS Tested


    Original     		SiS488DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF