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    SIR640 Search Results

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    SIR640 Price and Stock

    Vishay Siliconix SIR640ADP-T1-GE3

    MOSFET N-CH 40V 41.6A/100A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR640ADP-T1-GE3 Cut Tape 4,200 1
    • 1 $2.64
    • 10 $1.707
    • 100 $2.64
    • 1000 $0.86822
    • 10000 $0.86822
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    SIR640ADP-T1-GE3 Digi-Reel 4,200 1
    • 1 $2.64
    • 10 $1.707
    • 100 $2.64
    • 1000 $0.86822
    • 10000 $0.86822
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    SIR640ADP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.775
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    Vishay Siliconix SIR640DP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8
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    DigiKey SIR640DP-T1-GE3 Reel
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    SIR640DP-T1-GE3 Cut Tape
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    SIR640DP-T1-GE3 Digi-Reel 1
    • 1 $1.94
    • 10 $1.94
    • 100 $1.94
    • 1000 $1.94
    • 10000 $1.94
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    Vishay Intertechnologies SIR640ADP-T1-GE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIR640ADP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR640ADP-T1-GE3 Reel 26 Weeks 6,000
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    • 10000 $0.837
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    Mouser Electronics SIR640ADP-T1-GE3 11,686
    • 1 $1.76
    • 10 $1.47
    • 100 $1.19
    • 1000 $0.865
    • 10000 $0.791
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    Newark SIR640ADP-T1-GE3 Reel 6,000
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    • 10000 $0.794
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    SIR640ADP-T1-GE3 Cut Tape 1
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    TME SIR640ADP-T1-GE3 3,000
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    • 10000 $1.07
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    Avnet Asia SIR640ADP-T1-GE3 28 Weeks 6,000
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    Chip1Stop SIR640ADP-T1-GE3 5,530
    • 1 $1.3564
    • 10 $1.2014
    • 100 $1.0323
    • 1000 $0.865
    • 10000 $0.865
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    EBV Elektronik SIR640ADP-T1-GE3 3,000 27 Weeks 3,000
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    New Advantage Corporation SIR640ADP-T1-GE3 3,000 1
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    • 10000 $1.39
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    Vishay Huntington SIR640ADP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR640ADP-T1-GE3 1,070
    • 1 -
    • 10 $11.595
    • 100 $9.421
    • 1000 $9.421
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    SIR640 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR640ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8 Original PDF
    SIR640DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8 Original PDF

    SIR640 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiR640ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested


    Original     		PDF SiR640DP SiR640DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir640

    Abstract: made 314 vishay
    Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification


    Original     		PDF SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir640 made 314 vishay

    Untitled

    Abstract: No abstract text available
    Text: SiR640ADP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 40 0.0020 at VGS = 10 V 60 0.0025 at VGS = 4.5 V 60 Qg (Typ.) 28.5 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency


    Original     		PDF SiR640ADP SiR640ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX. ID (A) a 0.0020 at VGS = 10 V 100 0.0025 at VGS = 4.5 V 100 Qg (TYP.) 28.5 nC D 5 D 6 • Low Qg for high efficiency • 100 % Rg and UIS tested


    Original     		PDF SiR640ADP SR640ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification


    Original     		PDF SiR640DP 2002/95/EC SiR640DP-T1-GE3 11-Mar-11

    SiR640DP

    Abstract: No abstract text available
    Text: SiR640DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR640DP AN609, 0565m 9188m 0251m 7276m 9326m 3722m 0362m

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification


    Original     		PDF SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sir640

    Abstract: No abstract text available
    Text: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification


    Original     		PDF SiR640DP 2002/95/EC SiR640DP-T1-GE3 11-Mar-11 sir640

    PowerPAK 1212-8

    Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of


    Original     		PDF SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics


    Original     		PDF SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		PDF O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs