Dow Corning 340
Abstract: Dow Corning Dow Corning d 340 DOW 340 heat sink compound 340 Heat Sink Compound Semco cartridge AGP5223 D 217 dow corning silicone compound
Text: Product Information Silicon-Based Compounds Dow Corning 340 Heat Sink Compound FEATURES • High thermal conductivity • Low bleed • Stable at high temperatures COMPOSITION • Greaselike silicone fluid thickened with metal oxide filler Compound provides thermal coupling of electrical/electronic
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Untitled
Abstract: No abstract text available
Text: THERMAL PERFORMANCE OF AN ELLIPTICAL PIN FIN HEAT SINK Christopher L. Chapman, and Seri Lee Aavid Engineering, Inc. Laconia, New Hampshire 03247 Bill L. Schmidt Silicon Graphics Computer Systems Mountainview, California 94039 L m Abstract Comparative thermal tests have been carried out using
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DIM150PSM45-F000
Abstract: No abstract text available
Text: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES
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DIM150PSM45-F000
DS5956
LN26978)
DIM150PSM45-F000
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microcontroller base rectifier using scr
Abstract: AN10384 TRIAC power control circuit full wave triac speed controller TO92 triac how to calculate junction to ambient thermal resistance Triac application note drill motor speed control circuit refrigerator thermostat to220 mica
Text: AN10384 Triacs: How to calculate power and predict Tjmax Rev. 01 — 10 August 2005 Application note Document information Info Content Keywords Triac, Silicon Controlled Rectifier, power, thermal resistance, heatsink, Tjmax, knee voltage, slope resistance
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AN10384
microcontroller base rectifier using scr
AN10384
TRIAC power control circuit
full wave triac speed controller
TO92 triac
how to calculate junction to ambient thermal resistance
Triac application note
drill motor speed control circuit
refrigerator thermostat
to220 mica
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bi-directional switches IGBT
Abstract: dim400xsm65 ge traction motor DIM400XSM65-K000
Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.3 June 2007 LN25453 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates APPLICATIONS • High Reliability Inverters • Motor Controllers
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DIM400XSM65-K000
DS5808-1
LN25453)
DIM400XSM65-K000
bi-directional switches IGBT
dim400xsm65
ge traction motor
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DIM800FSM17-A000
Abstract: LIN26325
Text: DIM800FSM17-A000 Single Switch IGBT Module DS5461-3.2 August 2008 LIN26325 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES
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DIM800FSM17-A000
DS5461-3
LIN26325)
DIM800FSM17-A000
LIN26325
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DIM1200FSM12-A000
Abstract: LIN26322
Text: DIM1200FSM12-A000 Single Switch IGBT Module DS5547-3.1 August 2008 LIN26322 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES
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DIM1200FSM12-A000
DS5547-3
LIN26322)
DIM1200FSM12-A000
LIN26322
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DIM1600FSM12-A000
Abstract: LIN26324
Text: DIM1600FSM12-A000 Single Switch IGBT Module DS5533-3.1 August 2008 LIN26324 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES
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DIM1600FSM12-A000
DS5533-3
LIN26324)
DIM1600FSM12-A000
LIN26324
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bi-directional switches IGBT
Abstract: DIM800FSM12-A000 LIN26320 lin26
Text: DIM800FSM12-A000 Single Switch IGBT Module DS5531-3.1 August 2008 LIN26320 FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated AlSiC Base with AIN Substrates Lead Free Construction High Thermal Cycling Capability KEY PARAMETERS VCES
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DIM800FSM12-A000
DS5531-3
LIN26320)
bi-directional switches IGBT
DIM800FSM12-A000
LIN26320
lin26
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Untitled
Abstract: No abstract text available
Text: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and
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1N3208
DO-203AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DIM1200FSM12-A000
Abstract: IC LM 723 2764-3 DS5547-1
Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Information DS5547-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200FSM12-A000
DS5547-1
DIM1200FSM12-A000
IC LM 723
2764-3
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AN4502
Abstract: AN4503 GP1200ESM33 DS5308-1
Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001
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GP1200ESM33
DS5308-1
DS5308-2
GP1200ESM33
AN4502
AN4503
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM12
DS5291-1
DS5291-2
AN4502
AN4503
AN4505
AN4506
GP800DDM12
dynex igbt 1200v
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mj 13005
Abstract: DIM100XCM65-F000 DIM200XCM65-F000 6500V VCES 6500V
Text: Preliminary information DIM100XCM65-F000 IGBT Chopper Module DS5957-1 January 2010 LN26983 FEATURES KEY PARAMETERS • High Thermal Cycling Capability Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates VCES VCE(sat) * (typ) IC (max)
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DIM100XCM65-F000
DS5957-1
LN26983)
240ty
mj 13005
DIM100XCM65-F000
DIM200XCM65-F000
6500V
VCES 6500V
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Untitled
Abstract: No abstract text available
Text: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Preliminary Information DS5456-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200FSM17-A000
DS5456-1
DIM1200FSM17-A000
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Untitled
Abstract: No abstract text available
Text: DIM2400ESM17-A000 DIM2400ESM17-A000 Single Switch IGBT Module Preliminary Information DS5447-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM2400ESM17-A000
DS5447-2
DIM2400ESM17-A000
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Untitled
Abstract: No abstract text available
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200ESM33-A000
DS5492-5
DS5492-6
DIM1200ESM33y
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Untitled
Abstract: No abstract text available
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1600FSM17-A000
DS5455-1
DIM1600FSM17-A000
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LM 13500
Abstract: DIM2400ESM12-A000
Text: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM2400ESM12-A000
DS5529-1
LM 13500
DIM2400ESM12-A000
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NTE5371
Abstract: NTE5372 NTE537
Text: NTE5371 & NTE5372 Silicon Controlled Rectifier SCR for High Speed Switching 125 Amp, TO94 Features: D All Diffused Design D Center Amplifying Gate D High Surge Current Capability D Low Thermal Impedance D High Speed Performance Applications: D Inverters
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NTE5371
NTE5372
195K/W
08K/W
NTE5371
NTE5372
NTE537
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Untitled
Abstract: No abstract text available
Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1200ESM33-A000
DS5492-5
DS5492-6
DIM1200ESM33y
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DIM1800ESM12-A000
Abstract: No abstract text available
Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information DS5529-1.3 April 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1800ESM12-A000
DS5529-1
DIM1800ESM12-A000
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DIM1600FSM12-A000
Abstract: No abstract text available
Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information DS5533-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM1600FSM12-A000
DS5533-1
DIM1600FSM12-A000
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AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM18
DS5364-2
DS5364-3
3300y
AN4505
GP800DDM18
AN4502
AN4503
12V DC sine wave inverters circuit diagram
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