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    SILICON POWER 1GB Search Results

    SILICON POWER 1GB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    SILICON POWER 1GB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1gbt

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT MIG10J805H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ● Integrates Inverter, Converter Power Circuits in One Package ● Output Inverter Stage :


    Original     		MIG10J805H 0A/600V 0A/800V 961001EAAT 1gbt PDF

    virtex 6 fpga based image processing

    Abstract: SPARTAN-6 image processing DSP48A1 spartan 6 LX150t Digital filter design for SPARTAN 6 FPGA Xilinx Spartan-6 FPGA Kits car central lock virtex 5 fpga based image processing PCIe Endpoint SPARTAN-6 GTP
    Text: FPGA FAMILY spartan-6 FPGAs Th e Low-Cost Programmable Silicon Foundation for Targeted Design Platforms BALANCING COST, SPACE, POWER AND PERFORMANCE The Programmable Imperative Where Low Cost, Low Power Converge with High Performance • System designers in today’s pricesensitive markets face a confluence of


    Original     		PDF

    TYAD00AC00BUGK

    Abstract: SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1
    Text: TYAD00AC00BUGK TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM, Nand E2PROM and Giga Byte Nand E2PROM Mixed Multi-Chip Package DESCRIPTION Lead-Free The TYAD00AC00BUGK is a mixed multi-chip package containing a 1,073,741,824-bit 536,870,912-bit x 2devices


    Original     		TYAD00AC00BUGK TYAD00AC00BUGK 824-bit 912-bit 256-bit 224-pin 001e800 001e810 003d400 SCR Handbook, rca GBNAND P-FBGA224-1218-0 THGV ACMD18 ACMD42 p-fbga224 Toshiba confidential NAND THGVS1G3D1CXGI1 PDF

    TSMC 0.13um CMOS

    Abstract: "programmable on-chip termination" 10gbps serdes tsmc cmos XCVR CHIP EXPRESS SB1011 ethernet mdio circuit diagram mdio termination
    Text: SB1011 PRODUCT BRIEF SILICON BRIDGE SB1011 - Quad 0.625 - 4.25Gbps Low Power CMOS Transceiver Macro Cell in 0.13um TSMC Process FEATURES BENEFITS/ADVANTAGES • • • • • • • • • • • • • • • Quad SerDes transceivers with Clock multiplier and


    Original     		SB1011 SB1011 25Gbps 0625Gbps, 125Gbps, 25Gbps, 10b/20b TSMC 0.13um CMOS "programmable on-chip termination" 10gbps serdes tsmc cmos XCVR CHIP EXPRESS ethernet mdio circuit diagram mdio termination PDF

    silicon power 8GB

    Abstract: silicon power 2GB silicon power 1GB silicon power 4GB TDK GBDriver 8GB Nand flash hard disk spindle
    Text: 1/1 TDK Silicon Disk GBDisk Series Conformity to RoHS Directive Silicon Disks for Industrial Applications/Embedded Systems 1GB, 2GB, 4GB, 8GB With the increased capacity and price reductions now seen in the NAND-type flash memory, the silicon disk is a rapidly rising contender


    Original     		150mA 1500G 2002/95/EC, silicon power 8GB silicon power 2GB silicon power 1GB silicon power 4GB TDK GBDriver 8GB Nand flash hard disk spindle PDF

    Untitled

    Abstract: No abstract text available
    Text: EN27SN1G08 EN27SN1G08 1 Gigabit 128 Mx 8 , 1.8 V NAND Flash Memory Features • Voltage Supply: 1.7V ~ 1.95V • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit


    Original     		EN27SN1G08 it/528 9x11x1 48-pin PDF

    46LD16640A

    Abstract: LPDDR2 SDRAM
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD32320A-3BLA2 IS46LD32320A-3BPLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 46LD16640A LPDDR2 SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM PRELIMINARY INFORMATION MARCH 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD16640A-3BLA2 IS46LD32320A-3BLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:


    Original     		EN27LN1G08 it/528 Protect011/12/30 9x11x1 PDF

    Untitled

    Abstract: No abstract text available
    Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:


    Original     		EN27LN1G08 it/528 Protect2/30 9x11x1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR81280B L , IS43/46DR16640B(L) NOVEMBER 2013 1Gb (x8, x16) DDR2 SDRAM FEATURES •                     Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture


    Original     		IS43/46DR81280B IS43/46DR16640B 400MHz cycles/64 60-ball 84-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR81280B L , IS43/46DR16640B(L) NOVEMBER 2013 1Gb (x8, x16) DDR2 SDRAM FEATURES •                     Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture


    Original     		IS43/46DR81280B IS43/46DR16640B 400MHz cycles/64 DDR2-800D 60-ball PDF

    IS43DR16640A-3DBL

    Abstract: IS43DR16 IS43DR16640A-25DBL 46DR16640A is43dr16640a3dbli IS43DR16640A-25EBLI IS43DR16640A-3DBI IS43DR16640A 800E IS43DR16640A-3DBLI
    Text: IS43/46DR81280A, IS43/46DR16640A MARCH 2011 1Gb x8, x16 DDR2 SDRAM FEATURES •                Clock frequency up to 400MHz 8 internal banks for concurrent operation 4-bit prefetch architecture


    Original     		IS43/46DR81280A, IS43/46DR16640A 400MHz cycles/64 R16640A 84ball DDR2667D 60-ball IS43DR16640A-3DBL IS43DR16 IS43DR16640A-25DBL 46DR16640A is43dr16640a3dbli IS43DR16640A-25EBLI IS43DR16640A-3DBI IS43DR16640A 800E IS43DR16640A-3DBLI PDF

    IS43DR16640A-3DBI

    Abstract: No abstract text available
    Text: IS43/46DR81280A, IS43/46DR16640A PRELIMINARY INFORMATION JUNE 2010 1Gb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • Clock frequency up to 533MHz 8 internal banks for concurrent operation


    Original     		IS43/46DR81280A, IS43/46DR16640A 533MHz cycles/64 IS46DR16640A IS46DR81280A 25EBLA1 128Mb IS43DR16640A-3DBI PDF

    IS43DR16640A-25DBL

    Abstract: 800E
    Text: IS43/46DR81280A, IS43/46DR16640A PRELIMINARY INFORMATION AUGUST 2010 1Gb x8, x16 DDR2 SDRAM FEATURES • • • • • • • • • • • • • • • • Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		IS43/46DR81280A, IS43/46DR16640A 400MHz cycles/64 84ball DDR2667D 60-ball IS43DR16640A-25DBL 800E PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 60-ball 84-ball PDF

    IS43DR81280B

    Abstract: IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 60ball 60-ball IS43DR81280B IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL PDF

    IS43DR16640B3DBLI

    Abstract: IS43DR16640B-3DBL IS43DR16640B-3DBLI IS43DR81280B3DBL IS43DR16640B
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L ADVANCED INFORMATION JANUARY 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 84ball 60-ball IS43DR16640B3DBLI IS43DR16640B-3DBL IS43DR16640B-3DBLI IS43DR81280B3DBL IS43DR16640B PDF

    mig10J

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED 1GBT MODULE SILICON N CHANNEL 1GBT M IG 10J805H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS GXGYGZE • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage :


    OCR Scan     		MIG10J805H 10J805H 0A/600V 0A/800V mig10J PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MIG10J805H TOSHIBA INTEGRATED IG BT MODULE SILICON N CHANNEL 1GBT M I G 1 J 8 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • 5 H Units in mm GXGYGZE Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage :


    OCR Scan     		MIG10J805H /600V /800V 961001EAAT PDF

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.


    OCR Scan     		Q01bl54 M625H2YS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: DE I TG^TESD 001b:L33 fl | TOSHIBA {DIS C RE TE /O PTO } 9097250 TOSHIBA <DISCRETE/OPTO TO SHIBA 90D 16133 SEMICONDUCTOR ~r-33-‘Z'7 D TOSHIBA GTR MODULE M G 50 H2 YS 1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. riOTOR CONTROL APPLICATIONS.


    OCR Scan     		r-33-â 001blB7 PDF

    Untitled

    Abstract: No abstract text available
    Text: TA8331 AN TOSHIBA TENTATIVE TA8331AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC IH APPLIANCE CONTROLLER TA8331 AN is a control IC on a single chip dedicated to the control of the switching power supply, inverter, IGBT driver, and protector circuits in induction rice cookers and


    OCR Scan     		TA8331 TA8331AN 25A1837 SDIP30-P-400-1 PDF

    QD41

    Abstract: BYX97-300
    Text: BYX97 SERIES M A INTENANCE TYPE iILIPS INTERNATIONAL T> SbE I 7I10a5b DD41bSfi bll BIPHIN T -O l~ t RECTIFIER DIODES Also available to B S 9331-F130 Silicon rectifier diodes in metal envelopes similar to DO -5, intended fo r use in power rectifier applications.


    OCR Scan     		BYX97 7I10a5b DD41bSfi 9331-F130 1600R BYX97 711005bi_ 711D0Eb QD41 BYX97-300 PDF