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    Untitled

    Abstract: No abstract text available
    Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:


    Original     		PDF EN27LN1G08 it/528 Protect2/30 9x11x1

    Untitled

    Abstract: No abstract text available
    Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:


    Original     		PDF EN27LN1G08 it/528 Protect011/12/30 9x11x1