Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    9X11X1 Search Results

    9X11X1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    MX30UF4G26AB

    Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
    Text: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.


    Original     		PDF MX30UF2G26 MX30UF4G26 MX30UFxG26 PM2031 MX30UF4G26AB MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND

    NAND02GW3B2C

    Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width


    Original     		PDF NAND01G-B2B NAND02G-B2C Byte/1056 TSOP48 VFBGA63 NAND02GW3B2C ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G

    VFBGA63

    Abstract: NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program
    Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 byte/1056 word page, 1.8 V/3 V, NAND Flash memory Features • High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications ■ NAND interface – x8 or x16 bus width


    Original     		PDF NAND01G-B2B NAND02G-B2C byte/1056 TSOP48 VFBGA63 NAND02GW3B2C NAND01G-B2B NAND01GR3B2B NAND01GR4B2B NAND01GW3B2B NAND02G-B2C NAND01G cache program

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit

    PH28F640W18BD60

    Abstract: PH28F128W18BD60 PH28F640W18BE60 PH28F320W18BD60 29070* intel ph28f128w18td60
    Text: Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Datasheet Product Features • ■ ■ High Performance Read-While-Write/ Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 128-bit GE28F320W18TD60 GE28F320W18BD60 GE28F320W18TE60 GE28F320W18BE60 PH28F320W18TD60 PH28F320W18BD60 PH28F640W18BD60 PH28F128W18BD60 PH28F640W18BE60 29070* intel ph28f128w18td60

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode


    Original     		PDF 28F640L18, 28F128L18, 28F256L18 64-Mbit 128Mbit 16-Mbit 256-Mbit 16-Kword 8x10x1

    SCSP M18

    Abstract: PF38F 3098* intel PF38F4050
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		PDF 512-Mbit 256-Mbit 16-bit 107-ball PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 SCSP M18 PF38F 3098* intel PF38F4050

    Untitled

    Abstract: No abstract text available
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.3, DEC. 18, 2013 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA

    28F128L18

    Abstract: 28F256L18 28F640L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 PF48F3000 8x10x1 etox 256l18 16x128
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F640L18, 28F128L18, 28F256L18 64-Mbit 128Mbit 16-Mbit 256-Mbit 16-Kword 8x10x1 NZ48F3000L0YTQ0 28F128L18 28F256L18 28F640L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 PF48F3000 etox 256l18 16x128

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information MX30UF1G26 28 AB 1.8V, 1G-bit NAND Flash Memory MX30UF1G26(28)AB P/N: PM2073 REV. 0.00, MAY 09, 2014 1 Advanced Information MX30UF1G26(28)AB Contents 1.


    Original     		PDF MX30UF1G26 PM2073

    Untitled

    Abstract: No abstract text available
    Text: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 0.02, APR. 02, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.


    Original     		PDF MX30LF2G28AB MX30LF4G28AB MX30LFxG28AB PM2029

    RD38F4

    Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
    Text: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash


    Original     		PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 128-Mbit 256-Mbit 128-Mbit 32-Mbit 64-Mbit RD38F4 rd58f0012lvybb0 30094* intel

    PF38F4050

    Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
    Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state


    Original     		PDF 512-Mbit 256-Mbit PF38F4050M0Y0C0 PF38F5050M0Y0C0 PF38F5060M0Y0C0 PF38F5566MMY0C0 105-ball 105-ball PF38F5060M0Y0B0 PF38F4050 PF48F SCSP M18 pf38f5060m0y 3098* intel

    15x1m

    Abstract: No abstract text available
    Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32Mbit spare area


    Original     		PDF NAND128-A, NAND256-A NAND512-A, NAND01G-A x8/x16) Byte/264 32Mbit 15x1m

    PF48F3000

    Abstract: 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 28F128L18, 28F256L18 Datasheet Product Features „ „ High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F128L18, 28F256L18 128-Mbit 16-Mbit 256-Mbit 16-Kword 64-Kword x32SH x16SB x16/x32 PF48F3000 28F128L18 28F256L18 RD48F4000L0YBQ0 RD48F4000L0YTQ0 64Gbit Numonyx StrataFlash M18

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    strataflash 256 x 2 Mbits

    Abstract: Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853
    Text: Intel StrataFlash£ Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash density: 128- and 256-Mbit — LPSDRAM density: 128, 256 Mbit — Top/Bottom parameter flash


    Original     		PDF 1024-Mbit 256-Mbit 16-KWord 64-KWord 32-Mbit 64-Mbit 128-Mbit 16-Mbit strataflash 256 x 2 Mbits Migration Guide for Intel StrataFlash Memory J 253854 Intel SCSP 253853

    Untitled

    Abstract: No abstract text available
    Text: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance:


    Original     		PDF EN27LN1G08 it/528 Protect2/30 9x11x1

    MX30UF1G16

    Abstract: No abstract text available
    Text: Advanced Information MX30UF1G16 18 AC 1.8V, 1G-bit NAND Flash Memory MX30UF1G16(18)AC P/N: PM2140 REV. 0.00, JUL. 17, 2014 1 Advanced Information MX30UF1G16(18)AC Contents 1.


    Original     		PDF MX30UF1G16 PM2140

    MX60LF8G28AB-TI

    Abstract: No abstract text available
    Text: Advanced Information MX60LF8G28AB 3V, 8G-bit NAND Flash Memory MX60LF8G28AB P/N: PM2074 REV. 0.01, JUN. 03, 2014 1 Advanced Information MX60LF8G28AB Contents 1.


    Original     		PDF MX60LF8G28AB PM2074 MX60LF8G28AB-TI

    Untitled

    Abstract: No abstract text available
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.4, FEB. 27, 2014 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA

    Untitled

    Abstract: No abstract text available
    Text: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 1.1, JUN. 23, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.


    Original     		PDF MX30LF2G28AB MX30LF4G28AB MX30LFxG28AB PM2029