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    SILICON N CHANNEL IGBT HIGH SPEED POWER SWITCHING Search Results

    SILICON N CHANNEL IGBT HIGH SPEED POWER SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON N CHANNEL IGBT HIGH SPEED POWER SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES  High speed low loss IGBT. Low-injection punch-through IGBT.  Low driving power due to low input capacitance MOS gate.  High speed low recovery loss diode.


    Original     		PDF IGBT-SP-13012 P1/10 MBN800E33D-AX 000cycles)

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		PDF GT60M303 GT60M303 application GT60M303

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 circuit igbt failure rate

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303

    GT60M303 application

    Abstract: GT60M303 gt60m303 application notes
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 gt60m303 application notes

    MG150J7KS50

    Abstract: No abstract text available
    Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :


    Original     		PDF MG150J7KS50 2-110A1B MG150J7KS50

    28v motor toshiba

    Abstract: transistor a 92
    Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :


    Original     		PDF MG150J7KS50 2-110A1B 28v motor toshiba transistor a 92

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301 GT30J301

    10j312

    Abstract: GT10J312 marking code SM diode
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 marking code SM diode

    gt60n321

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		PDF GT60N321 gt60n321

    15j321

    Abstract: TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		PDF GT15J321 15j321 TRANSISTOR 15J321 GT15J321 TRANSISTOR 10003 TOSHIBA IGBT DATA BOOK 2-10R1C marking 6_a

    Untitled

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)


    Original     		PDF GT60N321 170mitation,

    TRANSISTOR 15J321

    Abstract: 15j321 RG105
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 µs (typ.


    Original     		PDF GT15J321 TRANSISTOR 15J321 15j321 RG105

    Untitled

    Abstract: No abstract text available
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)


    Original     		PDF GT60N321

    15j301

    Abstract: transistor 15j301 GT15J301 2-10R1C
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage


    Original     		PDF GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C

    GT60N32

    Abstract: GT60N321
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 60 A)


    Original     		PDF GT60N321 GT60N32 GT60N321

    GT60N32

    Abstract: gt60n321 GT60 IC601
    Text: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 60 A)


    Original     		PDF GT60N321 GT60N32 gt60n321 GT60 IC601

    10j303

    Abstract: IGBT Guide GT10J303 Toshiba c
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 10j303 IGBT Guide GT10J303 Toshiba c

    2-10R1C

    Abstract: 5J301 GT5J301 Toshiba c
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage


    Original     		PDF GT5J301 2-10R1C 5J301 GT5J301 Toshiba c

    15j321

    Abstract: TRANSISTOR 15J321 2-10R1C GT15J321 RG300A
    Text: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Fast switching FS • Enhancement mode type • High speed: tf = 0.03 s (typ.


    Original     		PDF GT15J321 15j321 TRANSISTOR 15J321 2-10R1C GT15J321 RG300A

    MG100J7KS50

    Abstract: No abstract text available
    Text: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT


    Original     		PDF MG100J7KS50 2-110A1B 000707EAA2 MG100J7KS50

    Untitled

    Abstract: No abstract text available
    Text: MG100J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT


    Original     		PDF MG100J7KS50 2-110A1B

    Untitled

    Abstract: No abstract text available
    Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		PDF GT30J126

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT


    OCR Scan     		PDF MIG50J804H /600V