Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT60M303 Search Results

    GT60M303 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT60M303 Toshiba Discrete IGBTs Original PDF
    GT60M303 Toshiba TRANS IGBT CHIP N-CH 900V 60A 3(2-21F2C) Original PDF
    GT60M303 Toshiba Discrete IGBTs Original PDF
    GT60M303 Toshiba Silicon N-channel MOS type insulated gate bipolar transistor for high power switching applications Original PDF
    GT60M303 Unknown N-channel iso-gate bipolar transistor (MOS technology) Scan PDF
    GT60M303(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 900V 60A 170W TO3P LH Original PDF

    GT60M303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT60M303

    Abstract: GT60M303 application GT60M303 circuit
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 application GT60M303 circuit

    GT60M303 application

    Abstract: GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)


    Original     		PDF GT60M303 GT60M303 application GT60M303

    GT60M303 application

    Abstract: GT60M303 circuit igbt failure rate
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 circuit igbt failure rate

    GT60M303

    Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303

    GT60M303 application

    Abstract: GT60M303 gt60m303 application notes
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.


    Original     		PDF GT60M303 GT60M303 application GT60M303 gt60m303 application notes

    GT60M303

    Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
    Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)


    Original     		PDF GT60M303 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C

    TOSHIBA IGBT GT60M303

    Abstract: GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C
    Text: GT60M303 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60M303 ○ 並列共振スイッチング用 単位: mm ○ 第 4 世代 z 高速 FRD を内蔵しています。 z 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT60M303 2-21F2C 20070701-JA TOSHIBA IGBT GT60M303 GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original     		PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    Sine wave PWM DC to AC Inverter ics

    Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
    Text: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package


    Original     		PDF TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F TA7327P SSOP10 GT60M303 Sine wave PWM DC to AC Inverter ics ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT60M303

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


    OCR Scan     		PDF GT60M303 25//s GT60M303

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD


    OCR Scan     		PDF GT60M303 25//s

    VQE 22

    Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.


    OCR Scan     		PDF GT60M303 VQE 22 sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M

    2fy transistor

    Abstract: RJ 0822 R K J 0822
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS • The 4th Generation • FRD Included Between E m itter and Collector • Enhancem ent-Mode • High Speed IGb T : tf=0,2fy«j TYP,


    OCR Scan     		PDF GT60M303 2fy transistor RJ 0822 R K J 0822