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Vishay Siliconix SIHP17N60D-E3 MOSFET N-CH 600V 17A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP17N60D-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.52526 10000 $1.52526	Buy Now
Vishay Siliconix SIHP17N60D-GE3 MOSFET N-CH 600V 17A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP17N60D-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.52526 10000 $1.52526	Buy Now
Vishay Intertechnologies SIHP17N60D-E3 Mosfet, N Channel, 600V, 17A, To-220Ab-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:-Rohs Compliant: Yes \|Vishay SIHP17N60D-E3
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Newark	SIHP17N60D-E3	Cut Tape			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIHP17N60D-E3	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHP17N60D-GE3 Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
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TME	SIHP17N60D-GE3				1	1 $3.22 10 $2.9 100 $2.3 1000 $2.15 10000 $2.15	Get Quote
Vishay Siliconix SIHP17N60D D SERIES POWER MOSFET Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHP17N60D		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SIHP17N60D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHP17N60D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO-220AB		Original	PDF
SIHP17N60D-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 17A TO-220AB		Original	PDF

SIHP17N60D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
S11074 Abstract: No abstract text available Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC	Original	SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11074	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiHP17N60D 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
S11074 Abstract: No abstract text available Text: SiHP17N60D Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 RDS(on) () VGS = 10 V 0.340 Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration • 100 % Avalanche Tested RoHS • Compliant to RoHS Directive 2002/95/EC	Original	SiHP17N60D 2002/95/EC O-220AB O-220AB SiHP17N60D-E3 11-Mar-11 S11074	PDF
Untitled Abstract: No abstract text available Text: SiHP17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 650 RDS(on) max. at 25 °C () VGS = 10 V 0.340 Qg (Max.) (nC)	Original	SiHP17N60D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Device Application Note AN849 Abstract: AN849 planar mosfet Text: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching	Original	AN849 Device Application Note AN849 AN849 planar mosfet	PDF