Untitled
Abstract: No abstract text available
Text: IRLZ44S_RC, SiHLZ44S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLZ44S
SiHLZ44S
AN609,
4514m
1503m
9659m
8331m
5720m
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Untitled
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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IRLZ44,
SiHLZ44
O-220
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRLZ44
Abstract: SiHLZ44 SiHLZ44-E3 81274
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 V RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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IRLZ44,
SiHLZ44
O-220
O-220
18-Jul-08
IRLZ44
SiHLZ44-E3
81274
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D2Pak Package vishay material
Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
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PDF
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IRLZ44S,
SiHLZ44S
O-263)
18-Jul-08
D2Pak Package vishay material
IRLZ44S
SiHLZ44S-E3
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irlz44
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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PDF
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irlz44
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Untitled
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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PDF
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220Aelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21
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IRLZ44S,
SiHLZ44S
O-263)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21
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IRLZ44S,
SiHLZ44S
2002/95/EC
O-263)
11-Mar-11
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IRLZ44
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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Original
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PDF
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IRLZ44,
SiHLZ44
2002/95/EC
O-220
O-220
18-Jul-08
IRLZ44
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Untitled
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D D2PAK (TO-263) G G D S S N-Channel MOSFET • Halogen-free According to IEC 61249-2-21
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PDF
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IRLZ44S,
SiHLZ44S
2002/95/EC
O-263)
18-Jul-08
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48 H diode
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21
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PDF
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IRLZ44S,
SiHLZ44S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
48 H diode
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48 H diode
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.028 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21
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PDF
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IRLZ44S,
SiHLZ44S
2002/95/EC
O-263)
11-Mar-11
48 H diode
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272048
Abstract: No abstract text available
Text: IRLZ44_RC, SiHLZ44_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRLZ44
SiHLZ44
AN609,
CONFIGURATIt-10
9901m
4362m
5162m
4580m
272048
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IRLZ44
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRLZ44
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SMD DIODE marking AB
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive
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PDF
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IRLZ44S,
SiHLZ44S
SMD-220
12-Mar-07
SMD DIODE marking AB
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Untitled
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220AB
11-Mar-11
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smd diode 12c
Abstract: No abstract text available
Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive
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PDF
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IRLZ44S,
SiHLZ44S
SMD-220
18-Jul-08
smd diode 12c
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Untitled
Abstract: No abstract text available
Text: IRLZ44, SiHLZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Available • Logic-Level Gate Drive 0.028 Qg (Max.) (nC) 66 • RDS(on) Specified at VGS = 4 V and 5 V Qgs (nC) 12 • 175 °C Operating Temperature
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Original
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PDF
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IRLZ44,
SiHLZ44
2002/95/EC
O-220AB
O-220Aelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
2002/95/EC
O-262)
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SiHLZ14S
Abstract: IRLZ14 IRLZ14L IRLZ14S SiHLZ14L SiHLZ14S-E3
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 5 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single G G S COMPLIANT Third generation Power MOSFETs from Vishay utilize
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
18-Jul-08
IRLZ14
IRLZ14L
IRLZ14S
SiHLZ14S-E3
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Untitled
Abstract: No abstract text available
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
2002/95/EC
O-262)
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Untitled
Abstract: No abstract text available
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
2002/95/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
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IRLZ14S,
IRLZ14L,
SiHLZ14S
SiHLZ14L
2002/95/EC
11-Mar-11
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