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Vishay Siliconix SIHG16N50C-E3 MOSFET N-CH 500V 16A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHG16N50C-E3	Tube	462		1	1 $5.46 10 $3.643 100 $5.46 1000 $5.46 10000 $5.46	Buy Now
Vishay Intertechnologies SIHG16N50C-E3 Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 250W; TO247AC
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TME	SIHG16N50C-E3				1	1 $2.4 10 $2.16 100 $1.71 1000 $1.6 10000 $1.6	Get Quote

SIHG16N50C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHG16N50C-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 16A TO-247AC		Original	PDF

SIHG16N50C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved	Original	SiHG16N50C 2002/95/EC O-247AC O-247AC SiHG16N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved	Original	SiHG16N50C 2002/95/EC O-247AC O-247AC SiHG16N50C-E3 11-Mar-11	PDF
SiHG16N50C Abstract: AN609 Text: SiHG16N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG16N50C AN609, 1254m 1306m 8455m 4391m AN609	PDF
SIHG16N50C Abstract: No abstract text available Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved	Original	SiHG16N50C 2002/95/EC O-247AC SiHG16N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V, 16 A with RDS on max. = 380 mW at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3, SiHG16N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology	Original	SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 SiHG16N50C-E3 13-Jun-11 VMN-PT0246-1208	PDF
SIHG16N50C Abstract: No abstract text available Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved	Original	SiHG16N50C 2002/95/EC O-247AC SiHG16N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHG16N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG16N50C AN609, 5270m 1208m 1796m 1726m 1254m 1306m 8455m 4391m	PDF
SiHG16N50C Abstract: SIHG16N50C-E3 DIODE TO 1355 Text: SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved 17.6 Qgd (nC) • Trr/Qrr Improved	Original	SiHG16N50C 2002/95/EC O-247AC SiHG16N50C-E3 18-Jul-08 DIODE TO 1355	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC	Original	SiHP16 SiHF16 SiHB16 SiHG16 2002/95/EC SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 VMN-PT0246-1010	PDF