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    IRFPE50 Search Results

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    IRFPE50 Price and Stock

    Vishay Siliconix IRFPE50PBF

    MOSFET N-CH 800V 7.8A TO247-3
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    DigiKey IRFPE50PBF Tube 578 1
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    RS IRFPE50PBF Bulk 500
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    Vishay Siliconix IRFPE50

    MOSFET N-CH 800V 7.8A TO247-3
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    DigiKey IRFPE50 Tube
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    Quest Components IRFPE50 76
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    Vishay Intertechnologies IRFPE50

    MOSFET N-CHANNEL 800V - Bulk (Alt: IRFPE50)
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    Vishay Intertechnologies IRFPE50PBF

    MOSFET N-CHANNEL 800V - Bulk (Alt: IRFPE50PBF)
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    Avnet Americas IRFPE50PBF Bulk 12 Weeks 500
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    IRFPE50PBF Bulk 12 Weeks 500
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    Mouser Electronics IRFPE50PBF 3,775
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    Verical IRFPE50PBF 1,008 4
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    IRFPE50PBF 300 25
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    IRFPE50PBF 8 3
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    Arrow Electronics IRFPE50PBF 1,010 12 Weeks 1
    • 1 $3.5782
    • 10 $3.034
    • 100 $2.6629
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    IRFPE50PBF 8 18 Weeks 1
    • 1 $3.241
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    Newark IRFPE50PBF Bulk 1
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    RS IRFPE50PBF Bulk 500
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    TTI IRFPE50PBF Tube 1,725 25
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    TME IRFPE50PBF 345 1
    • 1 $2.89
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    Chip 1 Exchange IRFPE50PBF 53,950
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    Avnet Asia IRFPE50PBF 14 Weeks 500
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    EBV Elektronik IRFPE50PBF 25 13 Weeks 25
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    New Advantage Corporation IRFPE50PBF 250 1
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    Wuhan P&S IRFPE50PBF 37,000 1
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    International Rectifier IRFPE50

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    Bristol Electronics IRFPE50 135
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    IRFPE50 28
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    Quest Components IRFPE50 88
    • 1 $2.25
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    IRFPE50 88
    • 1 $3.6
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    IRFPE50 18
    • 1 $3.6
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    IRFPE50 108
    • 1 $10.98
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    Component Electronics, Inc IRFPE50 193
    • 1 $4.62
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    • 100 $3.46
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    IRFPE50 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFPE50 International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Original PDF
    IRFPE50 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFPE50 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 7.8A TO-247AC Original PDF
    IRFPE50 International Rectifier Power MOSFET Scan PDF
    IRFPE50 International Rectifier Power MOSFET(Vdss=800V, Rds(on)=1.2ohm, Id=7.8A) Scan PDF
    IRFPE50 International Rectifier N-Channel HEXFET Transistors, 800 Volt, 1.2 Ohm, TO247AC Scan PDF
    IRFPE50 International Rectifier TO-247 HEXFET Power MOSFETs Scan PDF
    IRFPE50 International Rectifier TO-247 N-Channel Plastic Package HEXFETs Scan PDF
    IRFPE50 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFPE50 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 800V, 7.8A, Pkg Style TO-247AC Scan PDF
    IRFPE50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFPE50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFPE50 Unknown FET Data Book Scan PDF
    IRFPE50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFPE50PBF International Rectifier 800V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-247AC package Original PDF
    IRFPE50PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 7.8A TO-247AC Original PDF

    IRFPE50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD - 94845 IRFPE50PbF • Lead-Free 11/14/03 Document Number: 91248 www.vishay.com 1 IRFPE50PbF Document Number: 91248 www.vishay.com 2 IRFPE50PbF Document Number: 91248 www.vishay.com 3 IRFPE50PbF Document Number: 91248 www.vishay.com 4 IRFPE50PbF Document Number: 91248


    Original     		PDF IRFPE50PbF O-247AC 08-Mar-07

    91248

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 11-Mar-11 91248

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)7.8 I(DM) Max. (A) Pulsed I(D)4.9 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)190 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFPE50

    IRFPE50

    Abstract: SiHFPE50 IRFPE50PBF
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC 11-Mar-11 IRFPE50 IRFPE50PBF

    IRFPE50

    Abstract: 78A31
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRFPE50, SiHFPE50 O-247 O-247 12-Mar-07 IRFPE50 78A31

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    035H

    Abstract: IRFPE30 91248
    Text: PD - 94845 IRFPE50PbF • Lead-Free 11/14/03 Document Number: 91248 www.vishay.com 1 IRFPE50PbF Document Number: 91248 www.vishay.com 2 IRFPE50PbF Document Number: 91248 www.vishay.com 3 IRFPE50PbF Document Number: 91248 www.vishay.com 4 IRFPE50PbF Document Number: 91248


    Original     		PDF IRFPE50PbF O-247AC 17ability, 12-Mar-07 035H IRFPE30 91248

    IRFPE50

    Abstract: SiHFPE50 47 AB IRFPE50PBF
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRFPE50, SiHFPE50 O-247 O-247 18-Jul-08 IRFPE50 47 AB IRFPE50PBF

    IRFPE50

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPE50

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50_RC, SiHFPE50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFPE50 SiHFPE50 AN609, 07-Jul-10

    035H

    Abstract: IRFPE30
    Text: PD - 94845 IRFPE50PbF • Lead-Free www.irf.com 1 11/14/03 IRFPE50PbF 2 www.irf.com IRFPE50PbF www.irf.com 3 IRFPE50PbF 4 www.irf.com IRFPE50PbF www.irf.com 5 IRFPE50PbF 6 www.irf.com IRFPE50PbF TO-247AC Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFPE50PbF O-247AC O-247-AC. 14ENTS 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		PDF IRFPE50, SiHFPE50 2002/95/EC O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    035H

    Abstract: IRFPE30
    Text: PD - 94845 IRFPE50PbF • Lead-Free 1 IRFPE50PbF 2 IRFPE50PbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1


    Original     		PDF IRFPE50PbF O-247AC O-247-AC. IRFPE30 035H IRFPE30

    IR2301

    Abstract: IR2301S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MS-012AA
    Text: Data Sheet No. PD60201-B IR2301 S HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V


    Original     		PDF PD60201-B IR2301 5M-1994. MS-012AA. MS-012AA) IR2301S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MS-012AA

    IR2110

    Abstract: IR2110S IR2113L6 IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB
    Text: PD - 91883 IR2113L6 HIGH AND LOW SIDE DRIVER Product Summary Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels


    Original     		PDF IR2113L6 IR2113L6 IR2110 IR2110S IRFBC20 IRFBC30 IRFBC40 IRFPE50 MO-036AB

    IR2109 application note

    Abstract: PD60163-T halfbridge design ir2109 IR2109 IR2109 application IRFBC20 70V100 IRFBC30 IR21094 IR2109S
    Text: Data Sheet No. PD60163-T IR2109 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60163-T IR2109 540ns IR21094) MS-012AA. MS-012AA) MS-001AC) MS-012AB) IR2109 application note PD60163-T halfbridge design ir2109 IR2109 application IRFBC20 70V100 IRFBC30 IR21094 IR2109S

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD60173 rev.F IR2183 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60173 IR2183 14-Lead IR21834 IR2183 IR2183S IR2183S

    IRFBC30

    Abstract: OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20
    Text: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Packages Features • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune


    Original     		PDF PD60262 IRS2181/IRS21814 IRS2181 14-Lead IRS21814 IRS2181S 114-Lead IRS21814S IRS2181PbF IRFBC30 OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20

    IRS2308

    Abstract: IR2308 IRFBC20 IRFBC30 IRFBC40 IRFPE50 IRS2308S
    Text: PRELIMINARY Data Sheet No.PD60266 revA IRS2308 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages immune • Gate drive supply range from 10 V to 20 V


    Original     		PDF PD60266 IRS2308 IRS2308 IRS2308PbF IRS2308SPbF IRS2308STRPbF IR2308 IRFBC20 IRFBC30 IRFBC40 IRFPE50 IRS2308S

    LV 1084

    Abstract: IRFPE50
    Text: PD-9.573B International S Rectifier IRFPE50 HEXFET P ow er M O S FE T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 800V ^D S on = 1


    OCR Scan     		PDF IRFPE50 O-247 T0-220 O-218 LV 1084 IRFPE50

    1RFPE50

    Abstract: IRFPE50 rd520
    Text: PD-9.573B International IRFPE50 ë |r]Rectifier HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^dss - 800V R DS on = 1


    OCR Scan     		PDF IRFPE50 O-247 O-220 O-218 1RFPE50 rd520

    Untitled

    Abstract: No abstract text available
    Text: International jog Rectifier HEXFET Power MOSFET • • • • • • MB5545H DDISSTB S2D WMIUR PD-9.573B IRFPE50 INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling


    OCR Scan     		PDF MB5545H IRFPE50 O-247 O-220 O-240