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    IRFBC30A Price and Stock

    Vishay Siliconix IRFBC30ASPBF

    MOSFET N-CH 600V 3.6A D2PAK
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    DigiKey IRFBC30ASPBF Tube 2,169 1
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    Vishay Siliconix IRFBC30APBF

    MOSFET N-CH 600V 3.6A TO220AB
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    DigiKey IRFBC30APBF Tube 1,476 1
    • 1 $2.07
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    Vishay Siliconix IRFBC30ASTRLPBF

    MOSFET N-CH 600V 3.6A D2PAK
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    DigiKey IRFBC30ASTRLPBF Cut Tape 579 1
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    IRFBC30ASTRLPBF Digi-Reel 1
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    IRFBC30ASTRLPBF Reel 800
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    Vishay Siliconix IRFBC30A

    MOSFET N-CH 600V 3.6A TO220AB
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    Vishay Siliconix IRFBC30AS

    MOSFET N-CH 600V 3.6A D2PAK
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    IRFBC30A Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFBC30A International Rectifier HEXFET Power Mosfet Original PDF
    IRFBC30A Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB Original PDF
    IRFBC30A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs Scan PDF
    IRFBC30AL International Rectifier HEXFET Power Mosfet Original PDF
    IRFBC30AL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-262 Original PDF
    IRFBC30ALPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-262 Original PDF
    IRFBC30APBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFBC30APBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A TO-220AB Original PDF
    IRFBC30AS International Rectifier HEXFET Power Mosfet Original PDF
    IRFBC30AS Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF
    IRFBC30ASPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF
    IRFBC30ASTRL International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRFBC30ASTRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF
    IRFBC30ASTRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF
    IRFBC30ASTRR International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRFBC30ASTRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF
    IRFBC30ASTRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 3.6A D2PAK Original PDF

    IRFBC30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30APbF O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    AN-994

    Abstract: IRFBC30A
    Text: PD- 91890B IRFBC30AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 91890B IRFBC30AS/L AN-994 IRFBC30A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		PDF IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07

    IRFBC30A

    Abstract: No abstract text available
    Text: PD- 91889A IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 1889A IRFBC30A O-220AB 12-Mar-07 IRFBC30A

    Untitled

    Abstract: No abstract text available
    Text: PD- 95534 SMPS MOSFET IRFBC30AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30AS/LPbF O-262 AN-994. IRFBC30A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    005 418

    Abstract: AN-994 IRFBC30A tc 90142
    Text: PD- 91890B IRFBC30AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 91890B IRFBC30AS/L 12-Mar-07 005 418 AN-994 IRFBC30A tc 90142

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN-994

    Abstract: IRFBC30A
    Text: PD- 91890B IRFBC30AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 91890B IRFBC30AS/L Derat2-7105 AN-994 IRFBC30A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    mosfet 600v 10a to-220ab

    Abstract: No abstract text available
    Text: PD - 95700 SMPS MOSFET IRFBC30APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30APbF O-220AB mosfet 600v 10a to-220ab

    Untitled

    Abstract: No abstract text available
    Text: PD- 91889 IRFBC30A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF IRFBC30A O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD- 91890A SMPS MOSFET IRFBC30AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		PDF 1890A IRFBC30AS

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL 2002/95/EC O-262) O-263) 2002/95/EC. 2002/95/EC 2011/65/EU.

    4139 temperature

    Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139
    Text: IRFBC30AS_RC, SiHFBC30AS_RC, IRFBC30AL_RC, SiHFBC30AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF IRFBC30AS SiHFBC30AS IRFBC30AL SiHFBC30AL AN609, 20-Apr-10 4139 temperature 9571 AN609 74139

    IRFBC30A

    Abstract: SiHFBC30A SiHFBC30A-E3
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFBC30A, SiHFBC30A O-220 18-Jul-08 IRFBC30A SiHFBC30A-E3

    MAR 740 MOSFET TRANSISTOR

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 11-Mar-11