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    SIHF6N40D Search Results

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    SIHF6N40D Price and Stock

    Vishay Siliconix SIHF6N40D-E3

    MOSFET N-CH 400V 6A TO220
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    DigiKey SIHF6N40D-E3 Tube 1,000
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    • 1000 $0.60359
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    Bristol Electronics SIHF6N40D-E3 400
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    Vishay Intertechnologies SIHF6N40D-E3

    N-CHANNEL 400V - Tape and Reel (Alt: SIHF6N40D-E3)
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    Avnet Americas SIHF6N40D-E3 Reel 1,000
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    TME SIHF6N40D-E3 1
    • 1 $1.05
    • 10 $0.95
    • 100 $0.75
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    Component Electronics, Inc SIHF6N40D-E3 50
    • 1 $3.85
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    • 100 $2.88
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    EBV Elektronik SIHF6N40D-E3 13 Weeks 50
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    Vishay Siliconix SIHF6N40D

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    Bristol Electronics SIHF6N40D 815
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    Quest Components SIHF6N40D 652
    • 1 $2.736
    • 10 $2.736
    • 100 $2.736
    • 1000 $1.1286
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    SIHF6N40D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF6N40D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 6A TO-220 FPAK Original PDF

    SIHF6N40D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF6N40D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    30338

    Abstract: No abstract text available
    Text: SiHF6N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF6N40D AN609, 3295m 8466m 4074m 4955m 3326m 12-Jun-12 30338

    Untitled

    Abstract: No abstract text available
    Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF6N40D 2011/65/EU O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIHF6N40D-E3

    Abstract: No abstract text available
    Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF6N40D O-220 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHF6N40D-E3

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836