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Vishay Siliconix SIHB12N50C-E3 MOSFET N-CH 500V 12A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB12N50C-E3	Reel			1,000	1 - 10 - 100 - 1000 $2.3625 10000 $2.3625	Buy Now
RS	SIHB12N50C-E3	Bulk			100	1 - 10 - 100 $3.66 1000 $3.3 10000 $3.11	Get Quote
Bristol Electronics	SIHB12N50C-E3		550			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHB12N50C-E3		440			1 $5.856 10 $5.856 100 $3.6112 1000 $3.2208 10000 $3.2208	Buy Now
Vishay Intertechnologies SIHB12N50C-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIHB12N50C-E3		995			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHB12N50C-E3		796			1 $5.856 10 $5.856 100 $5.856 1000 $2.928 10000 $2.928	Buy Now

SIHB12N50C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHB12N50C-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A D2PAK		Original	PDF

SIHB12N50C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SiHP12N50C Abstract: ktp12 Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) ktp12	PDF
SiHF Abstract: AN609 SiHP12N50C Text: SiHP12N50C_RC, SiHB12N50C_RC, SiHF12N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHP12N50C SiHB12N50C SiHF12N50C AN609, O220AB, 16-Apr-10 SiHF AN609	PDF
SiHP12N50C Abstract: sihb12n50c-e3 Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) sihb12n50c-e3	PDF
Untitled Abstract: No abstract text available Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)	PDF
Untitled Abstract: No abstract text available Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)	PDF
BY 220 diode Abstract: SiHF Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF	PDF
siliconix mosfet marking to-220 Abstract: No abstract text available Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) SiHP12N50C-E3 siliconix mosfet marking to-220	PDF
Untitled Abstract: No abstract text available Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved	Original	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263)	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
SiHP12N50 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs FEATURES • Maximum RDS on of 0.555 Ω at VGS = 10 V • Low gate charge, Qg max = 48 nC • RDS(on) * Qg FOM of 26.64 Ω-nC • 100 % avalanche tested • Improved Trr / Qrr • Compliant to RoHS Directive 2002/95/EC	Original	SiHP12N50 SiHB12N50 SiHF12N50 O-220AB, O-220 2002/95/EC SiHP12N50C SiHB12N50C SiHF12N50C	PDF