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BY 220 diode Abstract: SiHF Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages	Original	PDF	SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF

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BY 220 diode

Abstract: SiHF
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages

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SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF