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    SIEMENS PRODUCTS TRANSISTOR Search Results

    SIEMENS PRODUCTS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS PRODUCTS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siemens s7-300 battery replacement

    Abstract: siemens 300 Modular PLC features service manual SITOP siemens sitop power 20 electrical diagram siemens sitop power 40 siemens sitop power 10 6EP1931-2FC01 Maintenance Manual siemens sitop 6EP1437-3BA00 circuit diagram
    Text: Siemens AG 2013 SITOP Power Supply SITOP Catalog KT 10.1 Edition 2014 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Controls SIRIUS IC 10 E86060-K1010-A101-A2-7600 SIMATIC Products for Totally Integrated Automation E86060-K4921-A101-A3-7600


    Original     		PDF E86060-K1010-A101-A2-7600 E86060-K4921-A101-A3-7600 E86060-K4678-A111-B8-7600 E86060-D4001-A510-D2-7600 80/ST E86060-K4680-A101-C1-7600 SINA9-7600 siemens s7-300 battery replacement siemens 300 Modular PLC features service manual SITOP siemens sitop power 20 electrical diagram siemens sitop power 40 siemens sitop power 10 6EP1931-2FC01 Maintenance Manual siemens sitop 6EP1437-3BA00 circuit diagram

    siemens simatic op17 manual

    Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
    Text: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation


    Original     		PDF E86060-K6710-A101-B7-7600 80/ST E86060-K4680-A101-B9-7600 E86060-K4678-A111-B8-7600 E86060-K2410-A111-A8-7600 E86060-K8310-A101-A8-7600 E86060-K6850-A101-C3 P4-7600 siemens simatic op17 manual SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215

    SIEMENS THYRISTOR

    Abstract: TEMPFET SIEMENS THYRISTOR thy pwm thyristor thyristor control ic with current sense Discrete Thyristor Chip siemens thy mosfet controlled thyristor SIEMENS FAST THYRISTOR 6 thyristor driver circuit
    Text: Speed TEMPFET HL Application Note Temperature sense concept – Speed Tempfet® Principle of the temperature sense concept of the Speed-TEMPFET family Benno Köppl Introduction The well-known classic TEMPFET products from Siemens are a cost-effective solution for


    Original     		PDF

    siemens igbt

    Abstract: siemens MODULES IGBTS siemens igbt chip Semiconductor Group igbt siemens led siemens automotive pilot light eupec igbts Siemens Smart Power IC
    Text: Power electronics Sustained growth in power semiconductors The market for power semiconductors will double by the year 2000. Although bipolar power transistors and thyristors today account for about half of this market, their share will fall to about a third by the end of


    Original     		PDF

    35 micro-X Package MARKING CODE Q

    Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
    Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •


    Original     		PDF BFY450 19dBm QS9000 35 micro-X Package MARKING CODE Q BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3

    BFY405

    Abstract: Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"
    Text: BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    Original     		PDF BFY405 QS9000 BFY405 Micro-X marking "K" 35 micro-X Package MARKING CODE Q low noise Micro-X marking "K"

    Siemens Multibank DRAM

    Abstract: No abstract text available
    Text: SIEMENS 1 DRM256 Introduction Modular embedded DRAM is the core of a new service provided by the SIEMENS Memory Products group. Custom logic can be combined with the latest SIEMENS dynamic memory technology providing application specific embedded DRAM solutions manufactured by SIEMENS . Modular


    OCR Scan     		PDF DRM256 Siemens Multibank DRAM

    pin diagram of bf 494 transistor

    Abstract: siemens products transistor
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450

    Semiconductor 1346 transistor

    Abstract: DIODE bfp 86 marking 53 Sot-343
    Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz


    OCR Scan     		PDF Q62702-F1794 OT-343

    093.266

    Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA 093.266 pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05

    TEA 1091

    Abstract: DIODE bfp 86 siemens rs 1091
    Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091

    RF TRANSISTOR NPN MICRO-X

    Abstract: No abstract text available
    Text: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY405 25-Line Transistor25 QS9000 RF TRANSISTOR NPN MICRO-X

    BF 914 transistor

    Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
    Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1592 OT-343 BF 914 transistor transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914

    microwave transistor siemens

    Abstract: 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S
    Text: S IE M E N S BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF BFY420 25-Line Transistor25 QS9000 microwave transistor siemens 35 micro-X Package MARKING CODE Q micro-X Package MARKING CODE C BFY420 S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1316 OT-23 BFR183 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA Q62702-F1144 1 =C 3=B LU II BFP 93A FEs ro ' it m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1144 OT-143 temp-11-01 053SbOS 235b05 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration


    OCR Scan     		PDF BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5

    BFR194

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k