64713
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
11-Mar-11
64713
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PDF
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64713
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
64713
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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5193
Abstract: AN609
Text: SiE804DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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SiE804DF
AN609,
16-Dec-08
5193
AN609
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PDF
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64713
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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SiE804DF
18-Jul-08
64713
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiE804DF
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using
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Original
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SiE804DF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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PDF
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V
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VMN-PT0052-1002
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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R312
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction
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VMN-PT0052-1209
R312
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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