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    SIC IGBT Search Results

    SIC IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation
    TW045Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 40 A, 0.062 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    SIC IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC


    Original     		PDF AN-10A: Oct-2011. Nov-2011. GA06JT12-247

    SEMISOUTH

    Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
    Text: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC


    Original     		PDF -55oC 200oC 260oC* MIL-PRF-19500 O-257) O-257 SEMISOUTH 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    APT9402

    Abstract: No abstract text available
    Text: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely


    Original     		PDF com/micnotes/APT9402 APT9402

    FF600R12IS4F

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten PrimePACK™2 with fast IGBT2 and SiC diode for high switching frequency IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FF600R12IS4F FF600R12IS4F

    Untitled

    Abstract: No abstract text available
    Text: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier


    Original     		PDF GA35XCP12-247 247AB Ac155

    FF600R12IS4F

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC


    Original     		PDF FF600R12IS4F FF600R12IS4F

    Untitled

    Abstract: No abstract text available
    Text: GA35XCP12-247 IGBT/SiC Diode Co-pack Features Package • Optimal Punch Through OPT technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier


    Original     		PDF GA35XCP12-247 247AB Ac155

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2, SiC Diode und NTC für hochfrequentes Schalten PrimePACK™2 with fast IGBT2, SiC diode and NTC for high switching frequency IGBT-Wechselrichter / IGBT-inverter


    Original     		PDF FF600R12IS4F

    Untitled

    Abstract: No abstract text available
    Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.


    Original     		PDF GA100XCP12

    Untitled

    Abstract: No abstract text available
    Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds


    Original     		PDF GB100XCP12-227

    Untitled

    Abstract: No abstract text available
    Text: SPM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5287, Rev. C 600 VOLT, 16 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE BRIDGE MODULE WITH SiC FREEWHEELING DIODE Features • SiC Free wheel diode – zero reverse recovery loss  Isolated base plate  Low thermal impedance


    Original     		PDF SPM1005

    CW2013

    Abstract: sic marking e6
    Text: SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE  SILICON CARBIDE SiC 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO


    Original     		PDF SPM1001 CW2013 sic marking e6

    Untitled

    Abstract: No abstract text available
    Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package •         RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds


    Original     		PDF GB100XCP12-227

    Untitled

    Abstract: No abstract text available
    Text: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100JT12-227 OT-227 GA100JT12-227 GA100JT12 833E-48 073E-26 398E-9

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor


    Original     		PDF 10-PZ123BA080MR-M909L28Y 200V/80mâ 100kHz

    solar inverters circuit diagram

    Abstract: 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D
    Text: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less


    Original     		PDF O-220AC STPSC606D STPSC606G-TR STPSC806D STPSC806G-TR STPSC1006D solar inverters circuit diagram 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA50SICP12-227 OT-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA50SIPC12 99E-16 3E-05

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50


    Original     		PDF AN-10B: AN-10A Nov-2011. GA06JT12-247

    solar inverters circuit diagram

    Abstract: 10 amp smps circuit diagram of high power smps solar power inverter Circuit diagram SMPS CIRCUIT DIAGRAM 220AC INVERTER solar inverter circuit 15 amp diodes smps inverter circuit emi filter inverter motor supply
    Text: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less


    Original     		PDF O-220AC STPSC406D STPSC406B-TR STPS606D STPSC606G-TR STPSC806D STPSC1006D solar inverters circuit diagram 10 amp smps circuit diagram of high power smps solar power inverter Circuit diagram SMPS CIRCUIT DIAGRAM 220AC INVERTER solar inverter circuit 15 amp diodes smps inverter circuit emi filter inverter motor supply

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09