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    GA10SICP12 Search Results

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    GA10SICP12 Price and Stock

    GeneSic Semiconductor Inc GA10SICP12-247

    SIC CO-PACK SJT/RECT 10A 1.2KV
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    DigiKey GA10SICP12-247 Tube 510
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    NAC GA10SICP12-247 30
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    GeneSic Semiconductor Inc GA10SICP12-263

    TRANS SJT 1200V 25A D2PAK
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    DigiKey GA10SICP12-263 Tube 500
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    NAC GA10SICP12-263 500
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    Navitas Semiconductor GA10SICP12-263

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    Onlinecomponents.com GA10SICP12-263
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    Navitas Semiconductor GA10SICP12-247

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    Onlinecomponents.com GA10SICP12-247
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    GA10SICP12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA10SICP12-247 GeneSiC Semiconductor Power Drivers - Modules, Discrete Semiconductor Products, SIC CO-PACK SJT/RECT 10A 1.2KV Original PDF
    GA10SICP12-263 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 25A TO263-7 Original PDF

    GA10SICP12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10SICP12-247. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.


    Original
    GA10SICP12-247 GA10SICP12-247. 29-MAY-2015 GA10SICP12-247 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original
    GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original
    GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10SICP12-263. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.


    Original
    GA10SICP12-263 GA10SICP12-263. 29-MAY-2015 GA10SICP12-263 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    GA10SICP12-247 O-247AB GA10SIPC12 00E-47 26E-28 5E-10 11E-09 00E-03 PDF