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    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA100SICP12-227 OT-227 ReSIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA100SICP12-227 833E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12 99E-16 3E-05 86E-09

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA100SICP12-227. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 30-MAR-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA100SICP12-227 GA100SICP12-227. 30-MAR-2015 GA100SICP12-227 SUB33E-48 073E-26 398E-9 026E-09 0E-03 GA100SIPC12

    Untitled

    Abstract: No abstract text available
    Text: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA100SICP12-227 OT-227 Reduc00SIPC12 GA100SIPC12 00E-47 26E-28 75E-09 57E-09 00E-03