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    GA20SICP12 Search Results

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    GA20SICP12 Price and Stock

    GeneSic Semiconductor Inc GA20SICP12-247

    TRANS SJT 1200V 45A TO247AB
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    DigiKey GA20SICP12-247 Tube
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    GeneSic Semiconductor Inc GA20SICP12-263

    SIC CO-PACK SJT/RECT 20A 1.2KV
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    DigiKey GA20SICP12-263 Tube 250
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    NAC GA20SICP12-263 250
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    Navitas Semiconductor GA20SICP12-263

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    Onlinecomponents.com GA20SICP12-263
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    GA20SICP12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GA20SICP12-247 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 45A TO247 Original PDF
    GA20SICP12-263 GeneSiC Semiconductor Power Drivers - Modules, Discrete Semiconductor Products, SIC CO-PACK SJT/RECT 20A 1.2KV Original PDF

    GA20SICP12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20SICP12-247. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA20SICP12-247 GA20SICP12-247. 29-MAY-2015 GA20SICP12-247 SUB0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original     		PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20SICP12-263. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA20SICP12-263 GA20SICP12-263. 29-MAY-2015 GA20SICP12-263 SUB0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09

    transistor schottky model spice

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20SICP12-263 O-263 GA20SIPC12 00E-47 26E-28 50E-03 98E-10 22E-09 transistor schottky model spice

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03