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GA20SICP12 Price and Stock

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GeneSic Semiconductor Inc GA20SICP12-247 TRANS SJT 1200V 45A TO247AB
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DigiKey	GA20SICP12-247	Tube			250	1 - 10 - 100 - 1000 $35.75 10000 $35.75	Buy Now
GeneSic Semiconductor Inc GA20SICP12-263 SIC CO-PACK SJT/RECT 20A 1.2KV
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DigiKey	GA20SICP12-263	Tube			250	1 - 10 - 100 - 1000 $35.75 10000 $35.75	Buy Now
Newark	GA20SICP12-263	Bulk			250	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NAC	GA20SICP12-263				250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Navitas Semiconductor GA20SICP12-263
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Onlinecomponents.com	GA20SICP12-263					1 - 10 - 100 $112.36 1000 $40.18 10000 $40.18	Buy Now

GA20SICP12 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GA20SICP12-247		GeneSiC Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 45A TO247		Original	PDF
GA20SICP12-263		GeneSiC Semiconductor	Power Drivers - Modules, Discrete Semiconductor Products, SIC CO-PACK SJT/RECT 20A 1.2KV		Original	PDF

GA20SICP12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20SICP12-247. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.	Original	GA20SICP12-247 GA20SICP12-247. 29-MAY-2015 GA20SICP12-247 SUB0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier	Original	GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20SICP12-263. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 29-MAY-2015 $ * * GeneSiC Semiconductor Inc.	Original	GA20SICP12-263 GA20SICP12-263. 29-MAY-2015 GA20SICP12-263 SUB0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09	PDF
transistor schottky model spice Abstract: No abstract text available Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA20SICP12-263 O-263 GA20SIPC12 00E-47 26E-28 50E-03 98E-10 22E-09 transistor schottky model spice	PDF
Untitled Abstract: No abstract text available Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch	Original	GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03	PDF