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Vishay Siliconix SI9407BDY-T1-E3 MOSFET P-CH 60V 4.7A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9407BDY-T1-E3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.5252	Buy Now
	SI9407BDY-T1-E3	Cut Tape	4,355		1	1 $1.33 10 $1.091 100 $0.8484 1000 $0.5858 10000 $0.5858	Buy Now
	SI9407BDY-T1-E3	Digi-Reel			1	1 $1.33 10 $1.091 100 $0.8484 1000 $0.5858 10000 $0.5858	Buy Now
New Advantage Corporation	SI9407BDY-T1-E3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.48	Buy Now
Vishay Siliconix SI9407BDY-T1-GE3 MOSFET P-CH 60V 4.7A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI9407BDY-T1-GE3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.42462	Buy Now
	SI9407BDY-T1-GE3	Cut Tape	1,684		1	1 $1.08 10 $0.882 100 $0.6859 1000 $0.47362 10000 $0.47362	Buy Now
	SI9407BDY-T1-GE3	Digi-Reel			1	1 $1.08 10 $0.882 100 $0.6859 1000 $0.47362 10000 $0.47362	Buy Now
Quest Components	SI9407BDY-T1-GE3		6			1 $1.4 10 $1.12 100 $1.12 1000 $1.12 10000 $1.12	Buy Now
New Advantage Corporation	SI9407BDY-T1-GE3		42,500		1	1 - 10 - 100 - 1000 - 10000 $0.4357	Buy Now
Vishay Intertechnologies SI9407BDY-T1-GE3 P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9407BDY-T1-GE3	Reel	25,000	9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.474	Buy Now
	SI9407BDY-T1-GE3	Reel		9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.45197	Buy Now
Mouser Electronics	SI9407BDY-T1-GE3		11,990			1 $1.07 10 $0.853 100 $0.686 1000 $0.474 10000 $0.471	Buy Now
Verical	SI9407BDY-T1-GE3		30,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.5929	Buy Now
	SI9407BDY-T1-GE3		15,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.3209	Buy Now
	SI9407BDY-T1-GE3		67		17	1 - 10 - 100 $0.3696 1000 $0.3696 10000 $0.3696	Buy Now
Arrow Electronics	SI9407BDY-T1-GE3		30,000	9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.5929	Buy Now
	SI9407BDY-T1-GE3		15,000	9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.3225	Buy Now
	SI9407BDY-T1-GE3	Cut Strips	67	9 Weeks	1	1 $0.6128 10 $0.5561 100 $0.3696 1000 $0.3696 10000 $0.3696	Buy Now
Bristol Electronics	SI9407BDY-T1-GE3		4,658			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	SI9407BDY-T1-GE3		1,442			1 $5.64 10 $5.64 100 $5.64 1000 $2.82 10000 $2.82	Buy Now
TTI	SI9407BDY-T1-GE3	Cut Tape	1,600		10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI9407BDY-T1-GE3	Reel	57,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.385	Buy Now
TME	SI9407BDY-T1-GE3		3,836		1	1 $1.006 10 $0.55 100 $0.444 1000 $0.385 10000 $0.385	Buy Now
	SI9407BDY-T1-GE3		2,465		1	1 $0.875 10 $0.577 100 $0.459 1000 $0.413 10000 $0.385	Buy Now
Avnet Asia	SI9407BDY-T1-GE3			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.66658	Buy Now
Vishay Intertechnologies SI9407BDY-T1-E3 P-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI9407BDY-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9407BDY-T1-E3	Reel		9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.62081	Buy Now
Mouser Electronics	SI9407BDY-T1-E3		83,379			1 $1.1 10 $0.92 100 $0.742 1000 $0.54 10000 $0.461	Buy Now
Verical	SI9407BDY-T1-E3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.4086	Buy Now
	SI9407BDY-T1-E3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6154	Buy Now
	SI9407BDY-T1-E3		965		12	1 - 10 - 100 $0.7419 1000 $0.7419 10000 $0.7419	Buy Now
Arrow Electronics	SI9407BDY-T1-E3		2,500	9 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.4106	Buy Now
	SI9407BDY-T1-E3	Cut Strips	965	9 Weeks	1	1 $0.7419 10 $0.6758 100 $0.5939 1000 $0.496 10000 $0.496	Buy Now
TTI	SI9407BDY-T1-E3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.506	Buy Now

TME	SI9407BDY-T1-E3				1	1 $0.79 10 $0.693 100 $0.574 1000 $0.379 10000 $0.346	Get Quote
Avnet Asia	SI9407BDY-T1-E3			11 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI9407AEY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI9407AEY		78			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI9407 Datasheets (12)

Part	Manufacturer	Description	Type	PDF
Si9407AEY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI9407AEY	Vishay	FET: P CHANNEL, 60V, 3.5A, 0.12 OHM, PACKAGE SO8	Original	PDF
Si9407AEY	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Siliconix	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Vishay Telefunken	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407AEY	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfet, P-Channel, -60, Dual, Pkg Style, SO-8	Scan	PDF
SI9407AEY-DS	Vishay Telefunken	DS-Spice Model for Si9407AEY	Original	PDF
Si9407AEY SPICE Device Model	Vishay	P-Channel 50-V (D-S) MOSFET	Original	PDF
SI9407AEY-T1	Vishay Intertechnology	P-Channel 60-V (D-S), 175°C MOSFET	Original	PDF
SI9407BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC	Original	PDF
SI9407BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 4.7A 8-SOIC	Original	PDF
Si9407DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

SI9407 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si9407BDY-T1-GE3 Abstract: Si9407BDY Si9407BDY-T1-E3 Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11
C 6090 Abstract: AN609 Si9407AEY Text: Si9407AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si9407AEY AN609 17-Jan-06 C 6090
Si9407AEY Abstract: Si9407AEY SPICE Device Model Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si9407AEY capacita30V, 05-Nov-99 Si9407AEY SPICE Device Model
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	PDF	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05
Si9407DY Abstract: No abstract text available Text: Si9407DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -60 rDS(on) (W) ID (A) 0.150 @ VGS = -10 V "3.0 0.240 @ VGS = -4.5 V "2.4 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si9407DY Current20 P-38889--Rev.
Si9407DY Abstract: No abstract text available Text: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si9407DY S-47958--Rev. 15-Apr-96
Si9407AEY Abstract: No abstract text available Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
27k ohm resistor Abstract: 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 Si9407AEY 27k capacitor capacitor 1uF 15V data sheet of resistor 33k Text: 13.5V to 16.5V INPUT 1 C1 0.47uF 2 R2 27k C2 27nF 10 V+ C5 4.7uF 25V X5R VL EXT FREQ MAX1846 R1 150k 300kHz 3 CS PGND 4 FB REF GND 6 P1 Si9407AEY 0.15Ohm 9 -15V @ 0.25A L1 150uH DO5022P -154 8 0.25Ohm COMP C3 56pF C4 0.1uF R3 33k 7 5 D1 EC10 QS04 C6 10uF	Original	PDF	MAX1846 300kHz) Si9407AEY 15Ohm 150uH DO5022P 25Ohm 1846-15c 55mVpp 27k ohm resistor 27K resistor datasheet capacitor 47uF DO5022P-154 EC10QS04 RESISTOR 1210 27k capacitor capacitor 1uF 15V data sheet of resistor 33k
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SPICE Device Model Si9407BDY www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si9407BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si9407DY Abstract: No abstract text available Text: Si9407DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.150 @ VGS = –10 V "3.0 0.240 @ VGS = –4.5 V "2.4 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si9407DY S-47958--Rev. 15-Apr-96
Si9407AEY Abstract: DSA0016549 Text: Si9407AEY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si9407AEY S-53709--Rev. 04-Aug-97 DSA0016549
Si9407AEY Abstract: 99445 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.5 0.15 @ VGS = –4.5 V "3.1 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si9407AEY S-99445--Rev. 29-Nov-99 99445

SI9407BDY-T1-GE3 Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si9407AEY Abstract: 150CA Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available	Original	PDF	Si9407AEY Si9407AEY--T1 Si9407AEY--E3 150CA
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 ID (A)a rDS(on) (Ω) 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 8 nC APPLICATIONS	Original	PDF	Si9407BDY Si9407BDY-T1-E3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si9407AEY Abstract: No abstract text available Text: SPICE Device Model Si9407AEY Vishay Siliconix P-Channel 50-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si9407AEY 18-Jul-08
Si9407BDY Abstract: SI9407BDY-T1-GE3 Si9407BDY-T1-E3 Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si9407BDY 2002/95/EC Si9407BDY-T1-E3 Si9407BDY-T1-GE3 18-Jul-08
Si9407AEY-T1-E3 Abstract: Si9407AEY-T1-GE3 Si9407AEY Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 18-Jul-08
Si9407AEY-T1-E3 Abstract: Si9407AEY Si9407AEY-T1-GE3 Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si9407AEY 2002/95/EC Si9407AEY-T1-E3 Si9407AEY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	PDF	Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT

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SI9407 Price and Stock

Vishay Siliconix SI9407BDY-T1-E3

Vishay Siliconix SI9407BDY-T1-GE3

Vishay Intertechnologies SI9407BDY-T1-GE3

Vishay Intertechnologies SI9407BDY-T1-E3

Vishay Intertechnologies SI9407AEY

SI9407 Datasheets (12)

SI9407 Datasheets Context Search

Si9407AEY

Si9407BDY-T1-GE3

C 6090

Si9407AEY

Si9407AEY

Si9407DY

Si9407DY

Si9407AEY

27k ohm resistor

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Si9407DY

Si9407AEY

Si9407AEY

SI9407BDY-T1-GE3

Si9407AEY

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Si9407AEY

Si9407BDY

Si9407AEY-T1-E3

Si9407AEY-T1-E3

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