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    SI7658 Price and Stock

    Vishay Siliconix SI7658ADP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
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    DigiKey SI7658ADP-T1-GE3 Cut Tape 2,106 1
    • 1 $3.89
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    SI7658ADP-T1-GE3 Digi-Reel 2,106 1
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    SI7658ADP-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI7658ADP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7658ADP-T1-GE3)
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    Avnet Americas SI7658ADP-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SI7658ADP-T1-GE3 5,048
    • 1 $2.81
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    Newark SI7658ADP-T1-GE3 Reel 3,000
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    SI7658ADP-T1-GE3 Cut Tape 3,000
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    Bristol Electronics SI7658ADP-T1-GE3 24,021
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    Quest Components SI7658ADP-T1-GE3 14,400
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    SI7658ADP-T1-GE3 6,672
    • 1 $3.2
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    SI7658ADP-T1-GE3 2,240
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    TTI SI7658ADP-T1-GE3 Reel 3,000
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    Avnet Asia SI7658ADP-T1-GE3 10 Weeks 3,000
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    Chip1Stop SI7658ADP-T1-GE3 3,000
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    SI7658ADP-T1-GE3 3
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    New Advantage Corporation SI7658ADP-T1-GE3 3,000 1
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    Vishay BLH SI7658ADP-T1-GE3

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    Bristol Electronics SI7658ADP-T1-GE3 8,340 3
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    • 1000 $0.792
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    Vishay Intertechnologies SI7658ADPT1GE3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 36A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI7658ADPT1GE3 3,000
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    Vishay Intertechnologies SI7658ADP-GE3

    INSTOCK
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    Chip 1 Exchange SI7658ADP-GE3 2,671
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    SI7658 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7658ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A PPAK 8SOIC Original PDF

    SI7658 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7658ADP

    Abstract: Si7658ADP-T1-GE3 Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 SI7658A C2320
    Text: Specification Comparison Vishay Siliconix Si7658ADP vs. Si7658DP Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7658ADP-T1-GE3 replaces Si7658DP-T1-GE3 Si7658ADP-T1-GE3 replaces Si7658DP-T1-E3


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    PDF Si7658ADP Si7658DP Si7658ADP-T1-GE3 Si7658DP-T1-GE3 Si7658DP-T1-E3 16-Jul-09 SI7658A C2320

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7658ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    PDF Si7658ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7658ADP

    Abstract: 64115
    Text: SPICE Device Model Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    PDF Si7658ADP 18-Jul-08 64115

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


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    PDF Si7658ADP Si7658ADP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


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    PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 25hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


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    PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7658DP-T1-E3

    Abstract: Si7658DP Si7658DP-T1-GE3 74966 si7658
    Text: Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 48.5 nC • • • • Halogen-free available TrenchFET Power MOSFET 100 % Rg Tested


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    PDF Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 18-Jul-08 74966 si7658

    AN609

    Abstract: Si7658DP
    Text: Si7658DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF Si7658DP AN609 03-May-07

    Si7658DP-T1-E3

    Abstract: Si7658DP
    Text: New Product Si7658DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0024 at VGS = 10 V 60g 0.00325 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ) 48.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested


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    PDF Si7658DP Si7658DP-T1-E3 08-Apr-05

    SI7658

    Abstract: 81218 Si7658ADP Si7658ADP-T1-GE3 SI7658A
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


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    PDF Si7658ADP Si7658ADP-T1-GE3 11-Mar-11 SI7658 81218 SI7658A

    81218

    Abstract: si7658adp
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


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    PDF Si7658ADP Si7658ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 81218

    BSC 60g

    Abstract: No abstract text available
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


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    PDF Si7658ADP Si7658ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BSC 60g

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


    Original
    PDF Si7658ADP Si7658ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI7658ADP-T1-GE3

    Abstract: Si7658ADP SI7658 SI7658A
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


    Original
    PDF Si7658ADP Si7658ADP-T1-GE3 18-Jul-08 SI7658 SI7658A

    9434

    Abstract: AN609 Si7658ADP
    Text: Si7658ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si7658ADP AN609, 09-May-08 9434 AN609

    mosfet 7660

    Abstract: Si7658DP PF435
    Text: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si7658DP S-70707Rev. 23-Apr-07 mosfet 7660 PF435

    Si7658DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7658DP Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si7658DP 18-Jul-08

    Si7658ADP

    Abstract: mosfet 0018
    Text: SPICE Device Model Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    PDF Si7658ADP S-82077-Rev. 08-Sep-08 mosfet 0018

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7658ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60g 0.0028 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 COMPLIANT • Low-Side Switch for DC/DC Converters


    Original
    PDF Si7658ADP Si7658ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


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    PDF VMN-PT0105-1007

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


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    PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836