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    SI6463ADQ Search Results

    SI6463ADQ Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6463ADQ Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI6463ADQ-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF

    SI6463ADQ Datasheets Context Search

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    Si6463ADQ

    Abstract: Si6463ADQ-T1 Si6463BDQ
    Text: Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463ADQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6463BDQ-T1 Replaces Si6463ADQ-T1 Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1


    Original     		PDF Si6463BDQ Si6463ADQ Si6463BDQ-T1 Si6463ADQ-T1 Si6463BDQ-T1-E3 09-Nov-06

    Si6463ADQ

    Abstract: No abstract text available
    Text: Si6463ADQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –7.4 0.023 @ VGS = –2.5 V –6.3 0.032 @ VGS = –1.8 V –5.5 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6463ADQ


    Original     		PDF Si6463ADQ S-00280--Rev. 21-Feb-00

    SI6463ADQ

    Abstract: No abstract text available
    Text: Si6463ADQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 7.4 0.023 @ VGS = - 2.5 V - 6.3 0.032 @ VGS = - 1.8 V - 5.5 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6463ADQ G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6463ADQ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si6463ADQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 7.4 0.023 @ VGS = - 2.5 V - 6.3 0.032 @ VGS = - 1.8 V - 5.5 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6463ADQ G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6463ADQ 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6463ADQ New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –7.4 0.023 @ VGS = –2.5 V –6.3 0.032 @ VGS = –1.8 V –5.5 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6463ADQ


    Original     		PDF Si6463ADQ S-00280--Rev. 21-Feb-00

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3