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    Vishay Siliconix SI5855CDC-T1-E3

    MOSFET P-CH 20V 3.7A 1206-8
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    Chip-Germany GmbH SI5855CDC-T1-E3 1,458
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    Vishay Intertechnologies SI5855CDC-T1-E3

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    Chip-Germany GmbH SI5855CDC-T1-E3 309
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    SI5855CDC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5855CDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.7A 1206-8 Original PDF

    SI5855CDC Datasheets Context Search

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    Si5855CDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si5855CDC 18-Jul-08

    9806

    Abstract: 3771 8727 AN609
    Text: Si5855CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5855CDC AN609, CONFIG2518 15-Sep-08 9806 3771 8727 AN609

    Untitled

    Abstract: No abstract text available
    Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5855CDC 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5855CDC 2002/95/EC 11-Mar-11

    SI5855CDC-T1

    Abstract: Si5855CDC-T1-E3 68910
    Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5855CDC 2002/95/EC 18-Jul-08 SI5855CDC-T1 Si5855CDC-T1-E3 68910

    Untitled

    Abstract: No abstract text available
    Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5855CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S-8229

    Abstract: SI5855CDC
    Text: Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET


    Original     		PDF Si5855CDC 18-Jul-08 S-8229

    Si5855DC

    Abstract: Si5855CDC-T1-E3 Si5855CDC SI5855CDC-T1 SI5855DC-T1 Si5855DC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5855CDC vs. Si5855DC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5855CDC-T1-E3 replaces Si5855DC-T1-E3 Si5855CDC-T1-E3 replaces Si5855DC-T1


    Original     		PDF Si5855CDC Si5855DC Si5855CDC-T1-E3 Si5855DC-T1-E3 Si5855DC-T1 23-Sep-08 SI5855CDC-T1

    Untitled

    Abstract: No abstract text available
    Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 20 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5855CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477