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    SI4936CDY Search Results

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    SI4936CDY Price and Stock

    Vishay Siliconix SI4936CDY-T1-GE3

    MOSFET 2N-CH 30V 5.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936CDY-T1-GE3 Reel 7,500 2,500
    • 1 -
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    • 10000 $0.21816
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    SI4936CDY-T1-GE3 Cut Tape 353 1
    • 1 $0.61
    • 10 $0.525
    • 100 $0.3636
    • 1000 $0.25856
    • 10000 $0.25856
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    SI4936CDY-T1-GE3 Digi-Reel 1
    • 1 $0.61
    • 10 $0.525
    • 100 $0.3636
    • 1000 $0.25856
    • 10000 $0.25856
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    RS SI4936CDY-T1-GE3 Bulk 2,500
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    • 10000 $0.6
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    New Advantage Corporation SI4936CDY-T1-GE3 10,000 1
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    • 10000 $0.2413
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    Vishay Siliconix SI4936CDY-T1-E3

    MOSFET 2N-CH 30V 5.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4936CDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
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    • 10000 $0.21816
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    Vishay Intertechnologies SI4936CDY-T1-GE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4936CDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4936CDY-T1-GE3 Reel 6,000 2,500
    • 1 $0.1896
    • 10 $0.1896
    • 100 $0.1896
    • 1000 $0.1896
    • 10000 $0.1896
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    SI4936CDY-T1-GE3 Reel 19 Weeks 2,500
    • 1 -
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    • 10000 $0.23353
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    Mouser Electronics SI4936CDY-T1-GE3 11,897
    • 1 $0.61
    • 10 $0.525
    • 100 $0.364
    • 1000 $0.259
    • 10000 $0.229
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    Newark SI4936CDY-T1-GE3 Cut Tape 14,015 5
    • 1 $0.655
    • 10 $0.578
    • 100 $0.429
    • 1000 $0.429
    • 10000 $0.429
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    SI4936CDY-T1-GE3 Reel 2,500
    • 1 $0.282
    • 10 $0.282
    • 100 $0.282
    • 1000 $0.282
    • 10000 $0.255
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    SI4936CDY-T1-GE3 Cut Tape 2,500
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    • 100 $0.446
    • 1000 $0.446
    • 10000 $0.446
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    Quest Components SI4936CDY-T1-GE3 1,060
    • 1 $0.65
    • 10 $0.65
    • 100 $0.65
    • 1000 $0.195
    • 10000 $0.169
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    SI4936CDY-T1-GE3 1,060
    • 1 $0.65
    • 10 $0.65
    • 100 $0.65
    • 1000 $0.195
    • 10000 $0.169
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    TTI SI4936CDY-T1-GE3 Reel 10,000 2,500
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    • 10000 $0.218
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    TME SI4936CDY-T1-GE3 1,534 3
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    • 10 $0.508
    • 100 $0.409
    • 1000 $0.376
    • 10000 $0.342
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    Avnet Asia SI4936CDY-T1-GE3 20 Weeks 2,500
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    • 10000 $0.33301
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    Chip1Stop SI4936CDY-T1-GE3 2,500
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    • 10000 $0.235
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    Vishay Intertechnologies SI4936CDY-T1-E3

    Transistor MOSFET Array Dual N-Channel 30V 5A 8-Pin SO T/R - Tape and Reel (Alt: SI4936CDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4936CDY-T1-E3 Reel 19 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2176
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    Mouser Electronics SI4936CDY-T1-E3 2,619
    • 1 $0.61
    • 10 $0.533
    • 100 $0.364
    • 1000 $0.259
    • 10000 $0.202
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    TTI SI4936CDY-T1-E3 Reel 2,500
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    • 1000 -
    • 10000 $0.208
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    Vishay BLH SI4936CDY-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4936CDY-T1-GE3 1,325 11
    • 1 -
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    • 100 $0.3169
    • 1000 $0.156
    • 10000 $0.1365
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    Find more SI4936CDY price and stock on Findchips.com

    SI4936CDY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4936CDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A SO8 Original PDF
    SI4936CDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5.8A 8-SOIC Original PDF

    SI4936CDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4AB20

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		PDF Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 11-Mar-11

    5310

    Abstract: 2951 m 5672 AN609
    Text: Si4936CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4936CDY AN609, 16-Dec-08 5310 2951 m 5672 AN609

    si4936b

    Abstract: Si4936BDY-T1-E3 Si4936BDY-T1-GE3 Si4936CDY-T1-GE3 Si4936BDY Si4936CDY SI4936c
    Text: Specification Comparison Vishay Siliconix Si4936CDY vs. Si4936BDY Description: Package: Pin Out: Dual P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4936CDY-T1-GE3 replaces Si4936BDY-T1-GE3 Si4936CDY-T1-GE3 replaces Si4936BDY-T1-E3


    Original     		PDF Si4936CDY Si4936BDY Si4936CDY-T1-GE3 Si4936BDY-T1-GE3 Si4936BDY-T1-E3 15-Jul-09 si4936b SI4936c

    Untitled

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		PDF Si4936CDY-T1-E3 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


    Original     		PDF Si4936CDY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4936CDY 18-Jul-08

    Si4936CDY-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 11-Mar-11

    Si4936CDY-T1-GE3

    Abstract: 69097
    Text: New Product Si4936CDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4936CDY Si4936CDY-T1-GE3 18-Jul-08 69097

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477